L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Eindhoven University of Technology

Christophe Lachaud

Christian Dussarrat

Nicolas Blasco

Audrey Pinchart

Jean-Marc Girard

Ziyun Wang

Satoko Gatineau

Andreas Zauner

Alain Madec

Gijs Dingemans

Vanina Lahootun

Stephen Potts

Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe), Zr(EtCp)(NMe), ZrCp(NMe), Zr(MeCp)(NEtMe), Zr(EtCp)(NEtMe), ZrCp(NEtMe), Zr(MeCp)(NEt), Zr(EtCp)(NEt), ZrCp(NEt), Zr(iPrCp)(NMe), Zr(tBuCp)(NMe), Hf(MeCp)(NMe), Hf(EtCp)(NMe), HfCp(NMe), Hf(MeCp)(NEtMe), Hf(EtCp)(NEtMe), HfCp(NEtMe), Hf(MeCp)(NEt), Hf(EtCp)(NEt), HfCp(NEt), Hf(iPrCp)(NMe), Hf(tBuCp)(NMe), and mixtures thereof; and depositing the dielectric film on the substrate.

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing

Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(MeCp)(OR), wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.

Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process

Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I):(MM)ON,&#x2003;&#x2003;(I)wherein 0&#x2266;a&#x3c;1, 0&#x3c;b&#x2266;3, 0&#x2266;c&#x2266;1, Mrepresents a metal selected from (Hf), (Zr) and (Ti); and Mrepresents a metal atom atoms, which comprises the following steps:

Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (MM) ON, wherein 0&#x2266;a&#x3c;1, 0&#x3c;b&#x2266;3, 0&#x2266;c&#x2266;1, Mrepresents a metal selected from (Hf) or (Zr); and Mrepresents a metal atom. The method generally uses an Mmetal containing precursor selected from: Zr(MeCp)(NMe), Zr(EtCp)(NMe), ZrCp(NMe), Zr(MeCp)(NEtMe), Zr(EtCp)(NEtMe), ZrCp(NEtMe), Zr(MeCp)(NEt), Zr(EtCp)(NEt), ZrCp(NEt), Zr(iPrCp)(NMe), Zr(tBuCp)(NMe), Hf(MeCp)(NMe), Hf(EtCp)(NMe), HfCp(NMe), Hf(MeCp)(NEtMe), Hf(EtCp)(NEtMe), HfCp(NEtMe), Hf(MeCp)(NEt), Hf(EtCp)(NEt), HfCp(NEt), Hf(iPrCp)(NMe), or Hf(tBuCp)(NMe).

Method of depositing a metal-containing dielectric film

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Saint Michel sur Orge, France

Christophe Lachaud