Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

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Universitat Politécnica De Catalunya

Christophe Kazmierski

Jean-Luc Reverchon

Jean Decobert

Florian Legoff

Josep Joan Prat Gomà

David Carrara

José Antonio Lázaro Villa

Alexandre Garreau

Bernhard Schrenk

The invention relates to a radiation detector element () comprising a stack () of layers superimposed in a stacking direction (Z), the stack () having a first face () and a second face () and comprising a radiation-absorbing layer () consisting of a first semiconductor material (M) having a first band gap value and at least one barrier layer () consisting of a second semiconductor material (M) having a second band gap value, the second band gap value being strictly higher than the first band gap value. The second face () has at least one strip () defined in the stacking direction (Z) by the barrier layer (), the strip () consisting of the second semiconductor material (M) and having a doping of the first type and a free carrier density higher than or equal to 1.1017 cm&#x2212;3.

Radiation detector element and imager comprising an assembly of radiation detector elements

Disclosed is a radiation detector element including a stack of layers superimposed in a stacking direction, the stack having a first face and a second face and including a radiation-absorbing layer consisting of a first semiconductor material having a first band gap value and at least one barrier layer consisting of a second semiconductor material having a second band gap value, the second band gap value being strictly greater than the first band gap value. The stack further delimits a primary hole traversing each of the layers of the stack, the primary hole receiving at least part of a primary electrode. The barrier layer includes a first conducting zone having a free carrier density greater than or equal to 1.10/cm.

A device for generating a modulation of an optical signal is provided which has a first electro-absorption modulator including a first P-doped semi-conductor area, a first N-doped semi-conductor area, and a first active portion, along with a second electro-absorption modulator including a second P-doped semi-conductor area in electric contact with the first N-doped semi-conductor area, a second N-doped semi-conductor area, and a second active portion, and a connector for introducing electric modulation. In the device, the connector for introducing electric modulation is in contact with the first N-doped semi-conductor area and the second P-doped semi-conductor area.

Device for generating a modulation of an optical signal comprising electro-absorption modulators

A device for transmitting and/or modulating in-phase and quadrature optical signals generated by an optical source. This device includes modulators each arranged for modulating intensity of optical signals depending on commands, and at least three main multi-mode interferometers set in series and arranged for transforming in combination a received optical signal with an initial phase state into a final optical signal with a final phase state differing from this initial phase state by an accumulated phase shift chosen from a group including 0, &#x3c0;/2, &#x3c0; and 3&#x3c0;/2 and depending from the intensity modulations carried out by the modulators.

Device for transmitting and/or modulating optical signals with passive phase shifters

A method for enabling bidirectional data communication using a single optical carrier and a single laser source with the aid of an integrated, colorless demodulator and detector for frequency modulated signals, and a reflective modulator. A receiving optical system holds a technique for demodulation and detection of optical frequency modulated signals, enabling remodulation of the incoming signal to establish bidirectional communication with the transmitting optical system, without introducing a high penalty. A colorless demodulator and detector, which provides the functionality of a periodic filtering device for demodulation of the downstream, and also detection capability. The principle of operation of the CDD relies on the introduction of a comb transfer function with the help of a Semiconductor Optical Amplifier, by providing a reflected feedback signal to the CDD's active element. This periodic transfer function is obtained by an optical cavity and allows for wavelength-independent operation on a given wavelength grid.

Method and apparatus for bidirectional optical link using a single optical carrier and colorless demodulation and detection of optical frequency shift keyed data

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Marcoussis, France

Christophe Kazmierski