Kla Tencor Corporation

Kla-tencor Technologies Corporation

Christophe Fouquet

Zain Saidin

Gordon Abbott

Ellis Chang

Joe Wang

Carl Hess

Santosh Bhattacharyya

Saibal Banerjee

Savitha Nanjangud

Igor N Germanenko

Mike Van Riet

Ori Tadmor

Sergio Edelstein

Takuji Tada

Da Chen

Lian Yao

Various systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof are provided. One system is configured to detect design defects and process defects at locations on a wafer at which images are acquired by an electron beam review subsystem based on defects in a design, additional defects in the design, which are detected by comparing an image of a die in the design printed on the wafer acquired by the electron beam review subsystem to an image of the die stored in a database, and defects detected on the wafer by a wafer inspection system.

System and method for detecting design and process defects on a wafer using process monitoring features

Defects observed by imaging tools may be classified by automatic comparison of features observed in a defect image with design information relating to corresponding portions of the image. Defect information may be generated from a defect image from a defect imaging tool. Design information relating to one or more structures to be formed on the substrate in a vicinity of the defect may be retrieved. The defect may be classified based on a combination of the defect information from the defect image and design information relating to one or more structures to be formed on the substrate in the vicinity of the defect.

Use of design information and defect image information in defect classification

Various methods, designs, defect review tools, and systems for determining locations on a wafer to be reviewed during defect review are provided. One computer-implemented method includes acquiring coordinates of defects detected by two or more inspection systems. The defects do not include defects detected on the wafer. The method also includes determining coordinates of the locations on the wafer to be reviewed during the defect review by translating the coordinates of the defects into the coordinates on the wafer such that results of the defect review performed at the locations can be used to determine if the defects cause systematic defects on the wafer.

Determining locations on a wafer to be reviewed during defect review

Methods, defect review tools, and systems for locating a defect in a defect review process are provided. One method includes acquiring one or more images and data from an inspection tool. The one or more images illustrate an area on a specimen in which a defect to be reviewed is located. The data indicates a position and features of the defect within the area. The method also includes acquiring one or more additional images of the specimen proximate the position of the defect indicated in the data using an imaging subsystem of a defect review tool. In addition, the method includes identifying a portion of the one or more additional images that corresponds to the one or more images. The method further includes determining a position of the defect within the portion of the one or more additional images using the data.

Methods, defect review tools, and systems for locating a defect in a defect review process

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Sunnyvale, CA, United States of America

Christophe Fouquet