Aledia

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Christophe Bouvier

Xavier Hugon

Erwan Dornel

Carlo Cagli

Tiphaine Dupont

Philippe Gibert

Emilie Pougeoise

Nacer Aitmani

Olivier Girard

Brigitte Soulier

Vincent Beix

Marion Volpert

Thomas Lacave

Gabriel Pares

Denis Renaud

A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Method for producing optoelectronic devices comprising light-emitting diodes

An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.

Opto-electronic device with light-emitting diodes

An optoelectronic device including a semiconductor substrate including first and second opposing faces, a first set of first light-emitting diodes resting on a first portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a first electrode covering each first light-emitting diode, a first conductive portion insulated from the substrate, extending through the substrate and connected to the first electrode; a second set of second light-emitting diodes resting on a second portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a second electrode covering each second light-emitting diode, a second conductive portion insulated from the substrate and connected to the second electrode, and a first conductive element connecting the first conductive portion to the second portion of the substrate on the side of the second face.

Optoelectronic device comprising light-emitting diodes

An optoelectronic device including a support having a first face; a first set of first light-emitting diodes having first wire-like, conical or frustoconical semiconductor elements, each resting on a second face of a first contact stud, each first contact stud including, in addition, a third face opposite the second face; and a first conductive layer connecting the first contact studs and extending at least over part of the second face or the third face of each first contact stud, the first conductive layer and/or the first contact studs resting on the support.

Method for producing a microelectronic device formed from a stack of supports (W) each provided with one or more electronic components (C) and comprising a conductive structure () formed from a first blind conductive via () and a second blind conductive via () with a greater height, the first via and the second via being connected together.

Interconnection of several levels of a stack of supports for electronic components

Growing community of inventors

Grenoble, France

Christophe Bouvier