Csem Centre Suisse D'electronique Et De Microtechnique Sa&#x2014;recherche Et D&#xe9;veloppement

Ecole Polytechnique Federale De Lausanne

Other

Université De Neuchâtel

Csem Centre Suisse D'electronique Et De Microtechnique Sa

Ecole Polytechnique Féderale De Lausanne (epfl)

Christophe Ballif

Matthieu Despeisse

Hengyu Li

Jordi Escarre Palou

Karin Söderström

Laure-Emmanuelle Perret-Aebi

Nicolas Badel

Antonin Faes

Brett Akira Kamino

Toralf Scharf

Julien Bailat

Peter Cuony

Andrea Ingenito

Didier Domine

Bertrand Paviet-Salomon

Xavier Bulliard

Jordi Escarre

Björn Niesen

Andrea Tomasi

Jonas Geissbühler

Gaetano Parascandolo

Bertrand Paviet-salomon

Jonathan Champliaud

Gaëlle Andreatta

Philipp Löper

Gizem Nogay

Franz-Joseph Haug

Philippe Wyss

Josua STÜCKELBERGER

Philipp LÖPER

Jonas GEISSBÜHLER

Method of manufacturing a single-side-contacted photovoltaic device (), comprising the steps of: a) providing a photovoltaically-active substrate () defining a plurality of alternating hole collecting zones () and electron collecting zones () arranged in parallel strips; b) depositing a conductive layer () across said zones; c) depositing at least one conductive track () extending along at least part of each of said zones (); d) selectively forming a dielectric layer () on each of said zones (), so as to leave an exposed area free of dielectric at an interface between adjacent zones (); e) etching said conductive layer () in said exposed areas; f) applying a plurality of interconnecting conductors () so as to electrically interconnect at least a portion of said hole collecting zones () with each other, and to electrically interconnect at least a portion of said electron collecting zones () with each other.

Method of manufacturing a photovoltaic device

Method of manufacturing a photovoltaic module comprising at least a first layer and a second layer affixed to each other by means of an encapsulant, said method comprising steps of:

Method of manufacturing a photovoltaic module

Photovoltaic module comprising a plurality of multijunction photovoltaic cells, at least one of said multijunction photovoltaic cells comprising:

Photovoltaic module

Method of manufacturing a photovoltaic module comprising at least a first layer and a second layer affixed to each other by means of an encapsulant, said method comprising a lamination step wherein the encapsulant material comprises a silane-modified polyolefin having a melting point below 90&#xb0; C., pigment particles and an additive comprising a cross-linking catalyst; and wherein in said lamination step heat and pressure are applied to the module, said heat being applied at a temperature between 60&#xb0; C. and 125&#xb0; C.

Methods of manufacturing a photovoltaic module

The present invention relates to a solar cell comprising a heterojunction photoelectric device comprising, a front electrode layer, a back electrode layer comprising a metallic contact layer, a light-absorbing silicon layer arranged between said front electrode and said back electrode layers and a doped silicon-based layer arranged between said light-absorbing silicon layer and said back electrode layer, characterized in that said heterojunction photoelectric device further comprises a wide band gap material layer having an electronic band gap greater than 1.4 eV, said wide band gap material layer being applied on a surface of the light-absorbing silicon layer between said light-absorbing silicon layer and said doped silicon-based layer. The present heterojunction layer or stack of layers is compatible with thermal annealing and firing processes at T above 600&#xb0; C.

Silicon heterojunction solar cells and methods of manufacture

A photovoltaic device is proposed comprising a silicon-based substrate () having a p-type or n-type doping, with an intrinsic buffer layer () situated on said substrate. A first silicon layer () of a first doping type is situated on predetermined regions () of the intrinsic buffer layer. The first layer has interstices () between said predetermined regions (). The first silicon layer comprises at least partially a microcrystalline layer at its side away from the substrate. A microcrystalline silicon layer () of a second doping type is situated on said first silicon layer (). A third silicon layer () of the second doping type is situated on said intrinsic buffer layer at the interstices, the third silicon layer being amorphous at its side facing said silicon-based substrate and comprising an at least partially microcrystalline layer portion to the side away from the intrinsic buffer layer.

Photovoltaic device and method for manufacturing the same

In the present invention a new solar photovoltaic module is proposed comprising: a silicon based photovoltaic element; an intermediate layer deposited on said photovoltaic element to the incident light side; an interference filter deposited on the incident light side of said intermediate layer; a front element disposed on the incident light side of said interference filter. Said intermediate layer has a transparency of at least 90% for infrared light between 780 nm and 1200 nm and said interference filter is corrugated and composed of a multilayer comprising a plurality of dielectric layers designed to transmit at least 75% of the total incident solar infrared light between 780 nm and 1200 nm, and to reflect and diffuse incident visible solar light such that the perceived color of said reflected and diffused visible light by any observer positioned anywhere to the incident light side of said solar photovoltaic module and looking towards the front element of said solar photovoltaic module is defined by a Y10 tristimulus value not lower than 50 defined by an x value of 0.20 to 0.45 and a y value of 0.20 to 0.45 in a chromaticity diagram of a CIE 1964 Yxy color system using a white light source measured with a D65 light source with a 10-degree angular field.

Solar photovoltaic module

A device includes a conductive surface () and electrical contacts () by which an electric current is able to be passed. The electrical contacts () include conductive seeds () deposited on the conductive surface (), an electrically insulating layer (), which covers discontinuously the conductive seeds () in order to form openings leaving access to the conductive seeds (), and a plating layer () recovering the discontinuous insulating layer () and deposited on conductive seeds () which are accessible through the openings and form points from which the deposit of the plating layer () can start. The rest of the conductive surface (), which doesn't include any electrical contacts (), is continuously covered by the electrically insulating layer ().

Device comprising electrical contacts and its production process

A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of the elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer. The first conducting layer has a surface facing the microcrystalline silicon elementary photoelectric device such that the surface:

Multiple-junction photoelectric device and its production process

The textured transparent conductive layer according to the invention is deposited on a substrate intended for a photoelectric device and exhibiting a surface morphology formed from a sequence of humps and hollows. It is characterized in that its hollows have a rounded base with a radius of more than 25 nm; the said hollows are virtually smooth, which is to say that, where they exhibit microroughnesses, these microroughnesses have a height on average of less than 5 nm; and its flanks form an angle with the plane of the substrate whose median of the absolute value is between 30&#xb0; and 75&#xb0;.

Textured transparent conductive layer and method of producing it

Growing community of inventors

Neuchâtel, Switzerland

Christophe Ballif