University-Industry Cooperation Group of Kyung Hee University

Samsung Display Co., Ltd.

Christophe Avis

Jin Hee Jang

Tae-Woong Kim

Jeong Gi Kim

Young-Gug Seol

Youn-Goo Kim

Hyeong Pil Kim

Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below:CuSnS&#x2014;(Ga)O,&#x2003;&#x2003;[Formula 1]

Quantum dot light-emitting diode and method of fabricating the same

a p-type amorphous oxide semiconductor including gallium, a method of manufacturing the same, a solar cell including the same and a method of manufacturing the solar cell are disclosed. The p-type oxide semiconductor where gallium (Ga) is further combined with combination of one or more components selected from a group of CuS, SnO, ITO, IZTO, IGZO and IZO is provided.

P-type amorphous oxide semiconductor including gallium, method of manufacturing same, and solar cell including same and method of manufacturing said solar cell

Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

Thin-film transistor, method of manufacturing the same, and method of manufacturing backplane for flat panel display

Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.

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Seoul, South Korea

Christophe Avis