Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Christoph Walter

Roland Enzmann

Markus Horn

Tomasz Swietlik

Stephan Haneder

Jan Seidenfaden

Markus Graul

Alfred Lell

Harald König

Andreas Loeffler

Karsten Auen

Mathias Kämpf

Markus Arzberger

Andreas Rozynski

Jürgen Dachs

Thomas Hager

Robin Fehse

A carrier for an optoelectronic component includes a main body, wherein the main body includes a first electrically conductive heating layer arrangement, a first solder layer for soldering an optoelectronic component to the main body is arranged on a first side of the main body, the first electrically conductive heating layer arrangement is electrically insulated from the first solder layer and thermally connected to the first solder layer, and the first heating layer arrangement has an exposed portion on which molten solder of the first solder layer can flow to reduce an electrical resistance of the first heating layer arrangement.

Carrier for an optoelectronic component, method of producing a carrier for an optoelectronic component, wafer and soldering method

An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.

Arrangement

A method of producing an optoelectronic component includes providing a carrier including a top side; creating at the top side of the carrier a region that is recessed with respect to a mounting region of the top side to form a step between the mounting region and the recessed region; arranging at the top side of the carrier a metallization extending over the mounting region and the recessed region; creating a separating track in the metallization, wherein the metallization is completely severed at least in sections in the mounting region and is at least not completely severed in the recessed region; and arranging an optoelectronic semiconductor chip above the mounting region of the top side, wherein the optoelectronic semiconductor chip is aligned at the separating track.

Method of producing an optoelectronic component

In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

Method for producing a laser diode, mount and laser diode

A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Method of producing a semiconductor laser element, and semiconductor laser element

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Wuppertal, Germany

Christoph Walter