Abb Schweiz Ag

Abb Technology Ag

Asea Brown Boveri Inc.

Heraeus Noblelight Gmbh

Abb Power Grids Switzerland Ag

Christoph Von Arx

Munaf Rahimo

Ulrich Kogelschatz

Arnost Kopta

Maxi Andenna

Liutauras Storasta

Raffael Schnell

Stefan Stutz

An IGBT is disclosed with a high emitter-gate capacitance, wherein an active cell region can include plural emitter and gate regions. A termination edge region can include a varied lateral doping region VLD. Each gate polysilicon layer can be arranged at a surface of the semiconductor substrate in the gate regions, separated from the semiconductor substrate by a first insulating layer. A first SIPOS layer and a covering second insulating layer overlie at least portions of the gate polysilicon layer. In a central area, the gate polysilicon layer is in electrical contact with the overlying first SIPOS layer whereas, in a peripheral area, the gate polysilicon layer is electrically separated from the overlying first SIPOS layer. A substrate surface at the VLD region is in electrical contact with a second SIPOS layer, and an increased gate-emitter capacitance may be achieved by slightly modifying etch masks during manufacturing.

Insulated gate bipolar transistor with high emitter gate capacitance

A power semiconductor device is disclosed with layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side. The device can include a drift layer, a first base layer in direct electrical contact to the emitter electrode, a first source region embedded into the first base layer which contacts the emitter electrode and has a higher doping concentration than the drift layer, a first gate electrode in a same plane and lateral to the first base layer, a second base layer in the same plane and lateral to the first base layer, a second gate electrode on top of the emitter side, and a second source region electrically insulated from the second base layer, the second source region and the drift layer by a second insulating layer.

Power semiconductor device

A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of the wafer forms a base layer with a base layer thickness. A first layer of a first conductivity type with at least one first region and a second layer of a second conductivity type with at least one second and third region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The RC-IGBT can be configured such that the following exemplary geometrical rules are fulfilled: each third region area is an area, in which any two first regions have a distance bigger (i.e., larger) than two times the base layer thickness; the at least one second region is that part of the second layer, which is not the at least one third region; the at least one third region is arranged in the central part of the active region in such a way that there is a minimum distance between the third region border to the active region border of at least once the base layer thickness; the sum of the areas of the at least one third region is between 10 and 30% of the active region; and each first region width is smaller than the base layer thickness.

Reverse-conducting semiconductor device

The invention relates to a manufacturing method for an insulated gate semiconductor device cell, comprising the steps of forming a cell window () in a layered structure that is located on top of a semiconductor substrate (), forming at least one process mask that partially covers the cell window (). In forming the cell window (), at least one strip () of the layered structure is left to remain inside the cell window () and at least one strip () is used to serve as an edge for the at least one process mask (). The invention further relates to an insulated gate semiconductor device, comprising a semiconductor substrate () having an essentially planar top surface and an insulated gate formed on the top surface by a layered structure () that comprises at least one electrically insulating layer (), wherein at least one strip () of the layered structure () is disposed on a third area of the top surface between an edge of the insulated gate and a first main contact ().

Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell

In a UV high-power radiator, a plurality of dielectric tubes (6) having internal electrodes (7) are disposed in the interior of a quartz housing having rectangular cross section. The interior of the housing is filled with a filling gas which emits UV radiation under discharge conditions. The electrical supply is provided in such a way that the discharges (17) develop between adjacent dielectric tubes (6). A notable feature of this construction is its compactness, economical nature and service friendliness.

High-power radiator

In the cooling of UV high-power radiators, the cooling of the inner electrodes (5) which are at high tension potential is critical insofar as it is necessary to use fully demineralized water or oil for this purpose. Since a cooling body (9) must in any event be employed for the external cooling, this cooling body is utilized at the same time as heat exchanger for the internal cooling.

The irradiation device for gaseous or liquid substances has at least one high-power radiator with a discharge chamber (4) filled with filling gas. The filling gas contained therein emits radiation under the influence of quiet electrical discharges. The discharge chamber (4) immediately adjoins a treatment chamber (6) whose walls consist throughout of non-metallic material. An electrode pair (2, 7) and an ac source (12) connected to the two electrodes serve to feed the discharge, the coupling of the discharge chamber (4) to the electrodes being performed essentially capacitively. It is even possible, in particular, to treat by means of an irradiation device of such a design corrosive media or media for which extreme degrees of purity are the aim.

Growing community of inventors

Olten, Switzerland

Christoph Von Arx