Materion Advanced Materials Germany Gmbh

W.c. Heraeus Gmbh & Co Kg

Heraeus Deutschland Gmbh & Co Kg

W. C. Hereaeus Gmbh & Co. Kg

Christoph Simons

Martin Schlott

Markus Schultheis

Jens Wagner

Martin Weigert

Uwe Konietzka

G&uuml;nter Herklotz

Gunther Herklotz

Josef Heindel

Albert Kastner

Christoph Stahr

Carl Christoph Stahr

Andreas Herzog

Anna Schott

Jurgen Reuel

Lutz Schrapler

Y C Cho

J&uuml;rgen Reuel

Lutz Schr&auml;pler

Carl-Christoph Stahr

The present invention relates to a sputtering target, comprising a silver alloy comprising

Silver alloy-based sputter target

A sputtering target for the production of layers such as optical layers, the layers produced by the target, and a method for producing the target are described. In addition to Si or a combination of Si and Al, the sputtering target contains metal oxide(s), a combination of at least two metal oxides, or a combination containing at least one metal oxide in the form of an alloy or in the form of a mixture. The sputtering target has a metal oxide fraction generated by the Si and Al and the metal oxide(s) or the combination thereof. Preferably, the metal oxide in the sputtering target is a metal oxide selected from ZrO, TaO, YO, HfO, CaO, MgO, CeO, AlO, TiOand NbO.

Metal oxide target and method for producing said metal oxide target

The present invention relates to a sputtering target, which comprises a zirconium oxide as a sputtering material, wherein the zirconium oxide

Zirconium oxide based sputtering target

A tube-shaped sputtering target is provided having a carrier tube and an indium-based sputtering material arranged on the carrier tube. The sputtering material has a microstructure having a mean grain size of less than 1 mm, measured as the mean diameter of the grains on the sputtering-roughened surface of the sputtering material.

Tube-shaped sputtering target

An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 &#x3a9;-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

Sputter target based on titanium dioxide

A fine wire made of an alloy of gold which contains 0.6 to 2 weight % of nickel, or an alloy of gold which contains 0.1 to 2 weight % of nickel, 0.0001 to 0.1 weight % of alkaline earth metal and/or rare earth metal, and optionally 0.1 to 1.0 weight % of platinum and/or palladium . The fine wire is distinguished by a favorable electrical conductivity and a good ratio of strength to elongation. The fine wire is suitable both for wire bonding of semiconductor devices and for producing the ball bumps of flip-chips.

Fine wire made of a gold alloy, method for its production, and its use

Fine wires of a gold alloy of 0.05 to 0.95 wt % platinum, palladium or a mixture thereof; 0.001 to 0.1 wt % mischmetal containing at least 50 wt. % of cerium; and 0 to 0.1 wt % of alkaline earth metal. The wire has a favorable strength-to-elongation ratio and is suitable both for wire bonding and for making the ball bumps of flip chips.

Fine wire of gold alloy, method for manufacture thereof and use thereof

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Biebergemünd, Germany

Christoph Simons