Siltronic Ag

Christoph Seuring

Wilfried Von Ammon

Reinhold Wahlich

Robert Hoelzl

Robert Hölzl

Robert H&ouml;lzl

A process for producing a single-crystal silicon wafer, comprises the following steps: is satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi](T) is a limit solubility of oxygen in silicon at a temperature T, &#x3c3;is the surface energy of silicon dioxide, &#x3a9; is a volume of a precipitated oxygen atom, r is a mean COP and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part of the time being exposed to an oxygen-containing atmosphere.

Silicon wafer and process for producing it

A process for producing a single-crystal silicon wafer, comprises the following steps: is satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi](T) is a limit solubility of oxygen in silicon at a temperature T, &#x3c3;is the surface energy of silicon dioxide, &#x3a9; is a volume of a precipitated oxygen atom, r is a mean COP radius and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part of the time being exposed to an oxygen-containing atmosphere.

Growing community of inventors

Burghausen, Germany

Christoph Seuring