Robert Boschgmbh

Paragon Ag

Christoph Schelling

Hubert Benzel

Simon Armbruster

Jochen Zoellin

Ricardo Ehrenpfordt

Gerhard Lammel

Benedikt Stein

Rolf Scheben

Frank Schaefer

Heribert Weber

Stefan Pinter

Michael Stumber

Frederik Ante

Matthias Illing

Ando Feyh

Joerg Muchow

Silvia Kronmueller

Christian Huber

Ingo Herrmann

Franz Laermer

Jens Frey

Fabian Purkl

Ning Wang

Ralf Reichenbach

Friedjof Heuck

Johannes Classen

Frank Fischer

Mirko Hattass

Thomas Buck

Tjalf Pirk

Arnim Hoechst

Jochen Reinmuth

Jochen C Beintner

Thomas Friedrich

Hans Hecht

Reinhard Neul

Daniel Christoph Meisel

Torsten Ohms

Joerg Brasas

Michael Curcic

Juergen Graf

Reinhold Roedel

Torsten Kramer

Christoph Daniel Kraemmer

Ralf Noltemeyer

Hartmut Kueppers

Stefan Finkbeiner

Alexander Huebel

Stefan Singer

Christina Leinenbach

Stefan Weiss

Georg Bischopink

Frank Henning

Jan Niklas Caspers

Matthias Fuertsch

Paul Farber

Martin Husnik

Karl-Heinz Kraft

Roman Schlosser

Marc Schmid

Stefan Leidich

Andreas Krauss

Richard Fix

Tino Fuchs

Heiko Stahl

Christian Doering

Frederic Njikam Njimonzie

Ulrich Wagner

Frank Reichenbach

Volkmar Senz

Julian Gonska

Benjamin Schmidt

Andreas Duell

Christoph Friese

Kerrin Doessel

Joachim Fritz

Daniel Meisel

Lars Metzger

Winfried Bernhard

Thomas Mayer

Yvonne Bergmann

Edda Sommer

Robert Sattler

Michael Krueger

Rainer Schink

Timo Lindemann

Andreas Stratmann

Antoine Puygranier

Theresa Lutz

Franziska Rohlfing

Stephan Schwaiger

Gregor Schuermann

Christian Rettig

Johannes Kenntner

Frieder Sundermeier

Kathrin Knese

Christian Krummel

Christian Tobias Banzhaf

Michael Grieb

Walter Daves

A method for producing a nanoscale channel structure disclosed. The method includes depositing and structuring a first sacrificial layer on a substrate, depositing a second sacrificial layer on the substrate and on the first sacrificial layer, depositing an etching masking layer on the second sacrificial layer, partly removing the etching masking layer and the second sacrificial layer, removing the first sacrificial layer and additionally partly removing the second sacrificial layer, depositing a wall layer on the etching masking layer and on the substrate, structuring access openings to the second sacrificial layer, and removing the remaining second sacrificial layer.

Method for producing a nanoscale channel structure

A spectrometer device includes an optical interference filter which is designed to filter specific wavelength ranges of an incident light beam on passage through the optical interference filter. The spectrometer device also includes a detector device which is designed to detect the filtered light beam. Further, the spectrometer device includes a focusing device with a reflective surface. The focusing device is designed to focus the filtered light beam onto the detector device by reflection on the surface.

Spectrometer device and method for producing a spectrometer device

The disclosure relates to an interferometer element for use in a spectrometer which includes a micromechanical Fabry-Perot filter element, which has at least a first mirror element, a second mirror element, and a third mirror element. Each of the first mirror element, the second mirror element, and the third mirror element are arranged in series in an optical path of the interferometer element, and at least one of a first distance between the first and second mirror elements, and a second distance between the second and third mirror elements is modifiable.

Interferometer element, spectrometer and method for operating an interferometer

A method for operating a capacitive device. The method includes providing a pulsed readout signal having a pulse frequency at a readout signal channel, to which at least one capacitor unit of the capacitive device is electrically connected, and reading out the at least one capacitor unit of the capacitive device, which has a natural frequency with a natural frequency period duration t, using the pulsed readout signal. Each voltage pulse of the pulsed readout signal is applied to the readout signal channel in n temporally offset voltage stages, n being a natural number greater than or equal to 2, and a time offset &#x394;tis maintained between each two consecutively applied voltage stages in such a way that the following is true for at least one time offset &#x394;tbetween the voltage stages: m being a natural number greater than or equal to zero.

Readout signal generator and method for operating a capacitive device

A micromechanical mirror device, a mirror system, and a method for producing a micromechanical mirror device are disclosed. The mirror device comprises a first mirror element, which is flat, and a second mirror element, which is flat. The first and second mirror elements are arranged substantially plane-parallel. An intermediate space between the first and second mirror elements has a lower index of refraction than one or both of the first mirror element and second mirror element. The first and second mirror elements are locally spaced apart from each other by at least one support structure. The support structure overlaps with the first and second mirror elements in an axial direction, which is perpendicular to the first and second mirror elements. The support structure includes a material that is different from a material from which one or both of the first and second mirror elements are formed.

Micromechanical mirror device, mirror system, and method for producing a micromechanical mirror device

A spectrometer device includes a Fabry-Perot interferometer unit, which comprises a first carrier substrate, wherein the first carrier substrate is arranged on a lower side of the Fabry-Perot interferometer unit and includes an optical aperture. The spectrometer includes at least one of a first substrate, which is arranged on an upper side of the Fabry-Perot interferometer unit, which faces away from the lower side, and a second substrate with the first carrier substrate arranged with the lower side on the second substrate. The spectrometer further includes a photodetector device arranged on or in the at least one of the second substrate and the first substrate. A first electrical connection region of the photodetector device and a second electrical connection region of the Fabry-Perot interferometer unit are electrically contacted from the same direction.

A micromechanical sensor device and a corresponding production method, in which the micromechanical sensor device is equipped with a sensor substrate having a front side and a rear side, a sensor region provided on the front side that can be brought into contact with an environmental medium, and a capping device, attached on the front side, for capping the sensor region. In the capping device and/or in the sensor substrate, one or more capillaries are formed for conducting the environmental medium onto the sensor region, a liquid-repellent layer being provided at least in some regions on the inner walls of the capillaries.

Micromechanical sensor device with improved liquid tightness protection

An interferometer includes a holding element having an actuation recess, a first mirror element arranged on the holding element opposite the actuation recess, and a second mirror element arranged opposite the first mirror element at a mirror distance, to form an optical slit. The first mirror element is arranged between the second mirror element and the holding element and the optical slit is spatially separated from the actuation recess by the first mirror element. The interferometer further includes an electrode pair including a first actuation electrode in one of the mirror elements and a second actuation electrode on a side of the actuation recess opposite the first actuation electrode. The mirror distance can be varied by applying an electrical voltage to the electrode pair.

Interferometer and method for producing an interferometer

An optical switch includes a bus waveguide supported by a substrate, an actuation electrode supported by the substrate, the actuation electrode having fins that protrude in a direction perpendicular to the substrate and to the bus waveguide, and a reaction electrode having interdigitated fins configured to form a comb drive with the actuation electrode. When a voltage difference between the reaction electrode and the actuation electrode is less than a lower threshold, the reaction electrode is positioned a first distance from the bus waveguide, when the voltage difference between the reaction electrode and the actuation electrode is greater than an upper threshold, the reaction electrode is positioned a second distance from the bus waveguide, and the second distance is less than the first distance.

MEMS optical switch with stop control

An optical switch includes a first bus waveguide supported by a substrate, an optical antenna suspended over the first bus waveguide via a spring, and interdigitated electrodes coupling the substrate with optical antenna and configured to control a position of the optical antenna relative to the first bus waveguide. When a voltage difference applied to the interdigitated electrodes is less than a lower threshold, the optical antenna is at a first position offset from the first bus waveguide, when the voltage difference applied to the interdigitated electrodes is greater than an upper threshold, the optical antenna is at a second position offset from the first bus waveguide, and the offset at the second position is greater than at the first position.

In-plane MEMS optical switch

An optical switch includes a bus waveguide supported by a substrate, a coupling waveguide suspended over the bus waveguide, a reaction electrode coupled with, and adjacent to, the coupling waveguide, an actuation electrode supported by the substrate and configured to control a position of the coupling waveguide relative to the bus waveguide via the reaction electrode, and an optical antenna coupled with the coupling waveguide and disposed at a fixed distance from the bus waveguide. When a voltage difference between the reaction electrode and the actuation electrode is less than a lower threshold, the coupling waveguide is positioned a first distance from the bus waveguide, when the voltage difference between the reaction electrode and the actuation electrode is greater than an upper threshold, the coupling waveguide is positioned a second distance from the bus waveguide, and the second distance is less than the first distance.

MEMS optical switch with a cantilever coupler

A MEMS component including a first substrate having at least one first insulating layer and a first metallic coating on a first side; and including a second substrate having at least one second insulating layer and a second metallic coating on a second side, the second substrate including a micromechanical functional element, which is connected electroconductively to the second metallic layer. The first side and the second side are positioned on each other, the first insulating layer and the second insulating layer being interconnected, and the first metallic coating and the second metallic coating being interconnected. A method for manufacturing a MEMS component is also described.

MEMS component having low-resistance wiring and method for manufacturing it

A micromechanical sensor is described that includes: a substrate; a first functional layer that is situated on the substrate; a second functional layer that is situated on the first functional layer and that includes movable micromechanical structures; a cavity in the substrate that is situated below the movable mechanical structures; and a vertical trench structure that surrounds the movable micromechanical structures of the second functional layer and extends into the substrate down to the cavity.

Micromechanical sensor that includes a stress decoupling structure

A micromechanical sensor includes a base substrate, a cap substrate, and a MEMS substrate that is connected to each of the base and cap substrates by respective metallic bond connections and that includes a mechanical functional layer including movable MEMS elements, an electrode device for acquiring an indication of a movement of the MEMS elements and fashioned by layer deposition, and a sacrificial layer that is lower than the mechanical function layer, is fashioned by layer deposition, and is omitted in a region underneath the movable MEMS elements.

Micromechanical sensor

A micromechanical component, having a carrier wafer having at least one micromechanical structure that is situated in a cavern; a thin-layer cap situated on the carrier wafer, by which the cavern is hermetically sealed; and a cap wafer situated on the thin-layer cap in the region of the cavern having the micromechanical structure, the cap wafer hermetically sealing a region of the thin-layer cap above the cavern.

Micromechanical component

Growing community of inventors

Stuttgart, Germany

Christoph Schelling