Infineon Technologies Ag

Christoph N&ouml;lscher

Molela Moukara

Burkhard Ludwig

Michael Heissmeier

Markus Hofs&auml;ss

Josef Mathuni

J&uuml;rgen Knobloch

A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180&deg;. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180&deg;. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180&deg;.

Method for determining and removing phase conflicts on alternating phase masks

An alternating phase mask is described in which a propagation of a T phase conflict which occurs in the case of a T pattern structure is avoided by producing a phase jump at one of the 90&deg; corners of the T pattern structure. First and second transparent area segments, which produce a mutual phase difference of 180&deg;, are separated by a narrow slot running approximately at 45&deg; toward the corner of the T pattern structure. The structure containing the transparent area segments, which are separated by the slot running at 45&deg;, can also be provided at the other corner of the T structure providing a solution for each T conflict. The trimming mask for eliminating the dark line artificially produced by the 180&deg; phase jump is a conventional mask and requires no additional coloration. Moreover, alignment errors are minimal on account of the small number of trimming openings.

Alternating phase mask

A carrier has a surface with a mask layer thereon. An irradiation-sensitive layer on the mask layer is exposed and developed to form a first exposure structure. The first exposure structure is used as an etching mask while the mask layer is etched. The first exposure structure is subsequently removed. A second irradiation-sensitive layer is applied to the mask layer and the carrier. The second irradiation-sensitive layer is exposed with a first exposure dose and a second exposure dose. The second irradiation-sensitive layer is subsequently developed to form a second exposure structure with a first and second exposure structure thickness. The carrier is etched down to a first etching depth in the region of the first exposure structure thickness and down to a second etching depth in the region of the second exposure structure thickness. The first etching depth is larger than the second etching depth.

Growing community of inventors

Nürnberg, Germany

Christoph Nölscher

Growing community of inventors

Nürnberg, Germany

Christoph N&ouml;lscher

Christoph Nölscher