Infineon Technologies Ag

Christoph Koch

Tomas Manuel Reiter

Sven Schennetten

Stefan Edenharter

Michael Sielaff

Dietmar Spitzer

Waldemar Jakobi

Patrick Jones

Leo Aichriedler

Gerald Wriessnegger

Andre Uhlemann

Markus Thoben

Michael Larisch

Mark Nils Muenzer

Alexander Schwarz

Patrik Holt Jones

Peter Bayer

Andreas Schenk

Rene Cordes

Johannes Hackl

Volker Thorsten Schmidt

A semiconductor module includes a semiconductor die, an encapsulation encapsulating the die, and first and second power contacts electrically coupled to the die. The power contacts each include an external part exposed from the encapsulation and an overlapping part. The power contacts are configured to carry respective first and second currents. A current flow of the first current in the external part of the first power contact points into or out of the semiconductor module. A current flow of the second current in the external part of the second power contact points in the opposite direction of the first current flow. The overlapping parts overlap such that the current flows point in the same direction in the overlapping parts. The overlapping parts include overlapping slots configured to accept a current sensor element for measuring a combined current in the overlapping parts.

Semiconductor module, method for fabricating a semiconductor module, and system

A power semiconductor module includes: an electrically insulative frame having opposite first and second mounting sides, and a border that defines a periphery of the electrically insulative frame; a first substrate seated in the electrically insulative frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a plurality of busbars attached to the first substrate and extending through the border of the electrically insulative frame; a plurality of fixing positions at the first mounting side of the electrically insulative frame; and a plurality of electrically insulative protrusions jutting out from the second mounting side of the electrically insulative frame, wherein the protrusions are vertically aligned with the fixing positions. Methods of producing the power semiconductor module and power electronic assemblies that incorporate the power semiconductor module are also described.

Power semiconductor module having protrusions as fixing structures

A power semiconductor module includes: an electrically insulative frame having opposite mounting sides and a border wall that defines a periphery of the frame; a substrate seated in the frame; power semiconductor dies attached to the substrate; signal pins attached to the substrate and electrically connected to the power semiconductor dies; a busbar attached to the substrate and extending through the border wall; a receptacle in the border wall configured to receive a current sensor module and that exposes part of the busbar, the exposed part of the busbar having an opening; and a rotation bar jutting out from a sidewall of the receptacle and onto the exposed part of the busbar without obstructing the opening in the busbar, wherein the rotation bar forms an axis of rotation within the receptacle. A power electronic assembly that incorporates the power semiconductor module and corresponding method of production are also described.

Power semiconductor module with current sensor rotation bar

An external contact element for a power semiconductor module includes a bonded blank strip, the bonded blank strip being formed such that the external contact element includes: a first contact portion configured to be coupled to the power semiconductor module by a first solder joint, a second contact portion spaced from the first contact portion in a thickness direction out of the plane of the first contact portion, the second contact portion being configured to be coupled to an external appliance, and a spring portion connecting the first and second contact portions to each other and configured to compensate a movement along the thickness direction. The bonded blank strip includes a first sheet of a first metal or first metal alloy and a second sheet of a different second metal or second metal alloy. The second sheet is omitted from at least a substantial part of the first contact portion.

External contact element for a power semiconductor module and power semiconductor module

A method of producing a semiconductor module arrangement includes providing a first subassembly having a number Nof first adjustment openings, a second subassembly having a number Nof second adjustment openings and a third subassembly having a plurality of adjustment pins which are fixedly connected to one another, the first subassembly, the second subassembly and the third subassembly being independent of one another and not connected to one another. The first subassembly, the second subassembly and the third subassembly are arranged relative to one another in such a way that each of the adjustment pins engages into one of the first adjustment openings and/or into one of the second adjustment openings.

Method for producing a semiconductor module arrangement

Described is a power semiconductor module that includes: a frame made of an electrically insulative material; a first substrate seated in the frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a busbar extending from the first substrate through a side face of the frame; a current sensor module seated in a receptacle of the frame in sensing proximity of the busbar, the current sensor module including a current sensor attached to a circuit board; and a potting material fixing the current sensor module to the frame such that no air gap is present between the current sensor and the busbar. The potting material contacts the frame and the current sensor. Methods of producing the power semiconductor module are also described.

Power semiconductor module having a current sensor module fixed with potting material

A method may include pressing a sensor module onto a control board such that the sensor module is at an initial position where an air gap is present between a module body of the sensor module and the control board such that compliant pins of the sensor module are partially inserted into the control board. The method may include mounting the control board on a power module to cause pins of the power module to be at least partially inserted into the control board and the sensor module to be at least partially inserted in the power module such that a protrusion is through an opening in a busbar. The method may include pressing the control board onto the power module to cause the pins of the power module to be further inserted into the control board, the sensor module to be further inserted in the power module, and the sensor module to be at a final position.

Add-on current sensor for a power module

A semiconductor arrangement includes a circuit board having a metallization layer with first and second conductor tracks, and individual semiconductor chips each having a controllable semiconductor element, first and second load electrodes, and a control electrode. The first conductor track has a base section and further sections extending from the base section. The second conductor track has sections. The further sections of the first conductor track and the sections of the second conductor track extend parallel to one another in a first direction at least over a same lateral dimension of the individual semiconductor chips. The further sections of the first conductor track alternate with the sections of the second conductor track in a second direction orthogonal to the first direction. The individual semiconductor chips are arranged on the sections of the second conductor track. The first load electrodes are connected to the further sections of the first conductor track.

Semiconductor arrangement having a circuit board with a patterned metallization layer

A semiconductor arrangement includes a circuit board having a metallization layer with first and second conductor tracks. The first conductor track has a base section and first, second and third sections, the third section arranged between the first and second sections. The second conductor track has first and second sections. The first section of the second conductor track is arranged between the first and third sections of the first conductor track. The second section of the second conductor track is arranged between the second and third sections of the first conductor track. The third section of the first conductor track is arranged between the first and second sections of the second conductor track. First and second subsets of semiconductor chips are arranged on the first section of the second conductor track. Third and fourth subsets of semiconductor chips are arranged on the second section of the second conductor track.

Semiconductor arrangement with reliably switching controllable semiconductor elements

One aspect of the invention relates to a semiconductor module with an outer housing having four side walls, and a circuit carrier, which is mounted on the outer housing and has an upper side and a lower side opposite the upper side. A semiconductor chip is arranged on the upper side and in the outer housing. A first gripping socket, which is formed as an indentation, extends from the outer side of the outer housing into a first of the side walls.

Semiconductor module with gripping sockets, methods for gripping, for moving and for electrically testing a semiconductor module

A semiconductor module arrangement is provided having a first subassembly, a second subassembly and a third subassembly. The third subassembly has a quantity of adjustment pins which are fixedly connected to one another. The first subassembly has a number N1 of first adjustment openings, and the second subassembly has a number N2 of second adjustment openings. Each of the adjustment pins engages into a different one of the first adjustment openings and/or into one of the second adjustment openings. A corresponding method of producing the semiconductor module arrangement is also provided.

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Salzkotten, Germany

Christoph Koch