Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Ams-osram International Gmbh

Christoph Klemp

Petrus Sundgren

Andreas Biebersdorf

Ines Pietzonka

Stefan Illek

Felix Feix

Ana Kanevce

Christian Berger

Wolfgang Schmid

Martin Rudolf Behringer

Jens Ebbecke

Laura Kreiner

Markus Bröll

Philipp Kreuter

Hubert Halbritter

Thomas Schwarz

Peter Brick

Siegfried Herrmann

Georg Bogner

Alexander F Pfeuffer

Korbinian Perzlmaier

Erwin Lang

Karl Engl

Karsten Diekmann

Marc Philippens

Isabel Otto

Alvaro Gomez-Iglesias

Simon Schwalenberg

Michael Brandl

Markus Broell

Christine Rafael

Jean-Jacques Drolet

Andreas Leber

Julia Stolz

Andreas Rudolph

Xue Wang

Nicole Heitzer

Marie Assmann

Christoph Rupprich

Eva-Maria Rummel

Andreas Rausch

Teresa Baur

Marco Englhard

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

An optoelectronic semiconductor component includes a layer stack, a first and second contact means, an electrically conductive edge layer, and a first dielectric layer. The layer stack includes a side surface and a first and a second main surface. The first and second contact means may be arranged at the first and second main surfaces, respectively. Said contact means may electrically contact a first and second semiconductor region of the layer stack, respectively. The second contact means may be radiation-transmissive. The electrically conductive edge layer may be arranged on the layer stack and extend from the second contact means over the side surface as far as the first main surface. The first dielectric layer may be arranged between the edge layer and the layer stack. The second main surface may not be covered by the first dielectric layer.

Optoelectronic semiconductor component and production method

Embodiments provide a method for treating a semiconductor wafer comprising a set of aluminum gallium indium phosphide light emitting diodes (AlGaInP-LEDs) to increase a light generating efficiency of the AlGaInP-LEDs, wherein each AlGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area and a peripheral edge surrounding the central light generating area, wherein the method includes treating the peripheral edge of the core active layer of each AlGaInP-LED with a laser beam thereby increasing a minimum band gap in each peripheral edge to such an extent that, during operation of the AlGaInP-LED, an electron-hole recombination is essentially confined to the central light generating area.

Method of laser treatment of a semiconductor wafer comprising AlGaInP-LEDs to increase their light generating efficiency

A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

Optoelectronic component, semiconductor structure and method

In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.

Method for manufacturing a semiconductor device and optoelectronic device

In an embodiment a method for producing optoelectronic semiconductor devices includes providing at least one optoelectronic semiconductor chip with at least one contact side, generating at least one coating region and at least one protection region on the contact side or on at least one of the contact sides, applying at least one liquid coating material to the at least one contact side, wherein the at least one coating material wets the at least one coating region and does not wet the at least one protection region and solidifying the at least one coating material into at least one electrical contact structure on the at least one coating region such that the semiconductor chip is capable of being energized through the at least one contact structure.

Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.

Method for producing a connection structure and semiconductor device

An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.

Optoelectronic semiconductor component with contact elements and method for producing the same

The invention relates to a method for producing a semiconductor component comprising performing a plasma treatment of an exposed surface of a semiconductor material with halogens, and carrying out a diffusion method with dopants on the exposed surface.

Method for producing a semiconductor component comprising performing a plasma treatment, and semiconductor component

The invention relates to various aspects of a &#x3bc;-LED or a &#x3bc;-LED array for augmented reality or lighting applications, in particular in the automotive field. The &#x3bc;-LED is characterized by particularly small dimensions in the range of a few &#x3bc;m.

&#x3bc;-LED, &#x3bc;-LED device, display and method for the same

A method of producing a layer stack includes a) forming a first layer having a first material composition on a substrate, b) performing intermediate processing of the substrate with the first layer, c) forming an additional layer having a second material composition, the first material composition and the second material composition differing from each other by at most 10% by weight, at least locally directly on the first layer and d) applying a second layer at least in places directly onto the additional layer.

Method of producing a layer stack and layer stack

The invention relates to a method for producing at least one optoelectronic component () comprising the steps A) providing an auxiliary carrier (), B) epitaxially applying a sacrificial layer () on the auxiliary carrier (), wherein the sacrificial layer () comprises germanium, C) epitaxially applying a semiconductor layer sequence () on the sacrificial layer (), D) removing the sacrificial layer () by means of dry etching (), such that the auxiliary carrier () is removed from the semiconductor layer sequence ().

Method for producing at least one optoelectronic component, and optoelectronic component

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Wuppertal, Germany

Christoph Klemp