Infineon Technologies Ag

Infineon Technologies Austria Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Christoph Kadow

Dominik Heiss

Hans Taddiken

Thorsten Meyer

Markus Zundel

Norbert Krischke

Donald Dibra

Christoph Glacer

Uwe Seidel

Matthias Markert

Andreas Peter Meiser

Valentyn Solomko

Henning Feick

Anton Steltenpohl

Andrea Cattaneo

Stefan Decker

Christian Butschkow

Robert Illing

Gerhard Noebauer

Paolo Del Croce

Martin Bartels

Hans-Dieter Wohlmuth

Till Schloesser

Oliver Haeberlen

Wolfgang Werner

Walter Rieger

Stefan Woehlert

Marc Strasser

Markus Leicht

A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.

Methods and devices related to radio frequency devices

An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.

Integrated circuit, method for manufacturing an integrated circuit, wafer and method for manufacturing a wafer

In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material, and a switch arrangement. The switch arrangement includes a plurality of switches, and is configured to selectively provide electrical power to the set of the heaters.

Phase change switch device having a set of heaters arranged to heat a phase change material and method of operating the phase change switch device

A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

Phase change switch with multi face heater configuration

A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.

Switch device, method for operating switch device and method for manufacturing switch device

A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.

Switch device and method for manufacturing a switch device

In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material and a power source. A switch arrangement including a plurality of switches is provided, which is configured to selectively provide electrical power from the power source to the set of the heaters.

Phase change switch device and method of operating a phase change switch device

An integrated circuit is provided. The integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch. At least a part of the phase change switch is provided below the first metallization layer. The first metallization layer is provided laterally adjacent to the phase change switch. Moreover, a method is provided for manufacturing an integrated circuit. Further provided is a wafer for manufacturing an integrated circuit, and a method for manufacturing a wafer for manufacturing an integrated circuit.

A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.

Phase change switch with self-aligned heater and RF terminals

A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.

A method for manufacturing a device includes: providing a semiconductor substrate having an RF-device; providing a BEOL-layer stack on the first main surface of the semiconductor substrate; attaching a carrier structure to a first main surface of the BEOL-layer stack; removing a lateral portion of the semiconductor substrate which laterally adjoins the device region to expose a lateral portion of the second main surface of the BEOL-layer stack; and opening a contacting region of the BEOL-layer stack at the lateral portion of second main surface of the BEOL-layer stack.

Device and method for manufacturing the device

An integrated circuit includes a first and a second field effect transistor structure. The first field effect transistor structure includes a first gate electrode structure and a first field electrode structure. The second field effect transistor structure includes a second gate electrode structure and a second field electrode structure. The first and the second gate electrode structures are electrically separated from each other. The first and the second field electrode structures are separated from each other.

Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit

An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.

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Neuried, Germany

Christoph Kadow