Infineon Technologies Ag

Az Electronic Materials USA Corp.

Christoph Hohle

Christian Eschbaumer

Michael Sebald

Jörg Rottstegge

Waltraud Herbst

J&ouml;rg Rottstegge

Gertrud Falk

Eberhard Kühn

Klaus Elian

Ralph R Dammel

Johannes Kretz

Werner Mormann

Wolf-Dieter Domke

Michael Francis Houlihan

Eberhard K&uuml;hn

Frank Thrum

Kang-Hoon Choi

Jens Ferbitz

Jens Rottstegge

The invention relates to a method with contrast reversal which, inter alia, opens up new areas of application for resists.

Method for multiple irradiation of a resist

A bottom antireflective coating for photolithography at 157 nm or less, where the bottom antireflective coating includes a crosslinkable polymer which contains cinnamic acid derivatives.

Polymers based on cinnamic acid as a bottom antireflective coating for 157 NM photolithography

A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.

Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives

A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Silicon-containing resist for photolithography

A process for the amplification of structured resists utilizes a reaction between a nucleophilic group and an isocyanate group or thiocyanate group to link an amplification agent to a polymer present in the photoresist. The isocyanate group or the thiocyanate group in addition to the nucleophilic group form a reaction pair. One of the partners is provided on the polymer and the other partner on the amplification agent. The amplification reaction takes place more rapidly than a linkage to carboxylic anhydride groups. Furthermore, the amplification reaction permits the use of polymers that have high transparency at short wavelengths of less than 200 nm, in particular 157 nm.

Process for silylating photoresists in the UV range

A photoresist includes a polymer which has acid-cleavable groups in its main chain. The polymer can thus be cleaved by acid into short cleavage products which can be removed from the substrate through the use of a developer. The polymer is completely or partially fluorinated, and consequently has an improved transparency to light of short wavelengths.

Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithography

The chemically amplified resist includes a film-forming polymer, a photoacid generator, and a solvent. The film-forming polymer contains acid-labile groups which are eliminated under the action of an acid and liberate a group which brings about an increase in the solubility of the polymer in aqueous alkaline developers. The film-forming polymer has polymer building blocks derived from monomers which are at least monofluorinated and contain an anchor group for the attachment of an amplifying agent. As a result of the fluorination of the polymer building blocks, the transparency of the resist at an exposing wavelength of 157 nm is substantially increased, so that resist structures of increased layer thickness can be represented.

Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nm

A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.

Silicon resist for photolithography at short exposure wavelengths and process for making photoresists

The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Process for sidewall amplification of resist structures and for the production of structures having reduced structure size

Chemically amplified photoresists exhibit increased transparency at a wavelength of 157 nm. The chemically amplified photoresist includes a polymer containing first repeating units derived from a cinnamic acid or a cinnamic ester, which are at least monofluorinated or substituted by fluoroalkyl groups. Processes for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography using fluorinated cinnamic acid derivatives are also included.

CHEMICALLY AMPLIFIED PHOTORESIST AND PROCESS FOR STRUCTURING SUBSTITUENTS USING TRANSPARENCY ENHANCEMENT OF RESIST COPOLYMERS FOR 157 NM PHOTOLITHOGRAPHY THROUGH THE USE OF FLUORINATED CINNAMIC ACID DERIVATIVES

The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Negative resist process with simultaneous development and silylation

A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.

Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers

Growing community of inventors

Bubenreuth, Germany

Christoph Hohle