Huettinger Elektronik Gmbh & Co. Kg

Trumpf Huettinger Gmbh + Co. Kg

Trumpf Huttinger Gmbh + Co. Kg

Christoph Hofstetter

Gerd Hintz

Michael Glück

Thomas Kirchmeier

Daniel Gruner

Christian Bock

Andre Grede

Markus Winterhalter

André Grede

Ekkehard Mann

Manuel Vor Dem Brocke

Alberto Pena Vidal

Nikolai Schwerg

Christoph Gerhardt

Armin Bannwarth

The invention relates to a device for generating a plurality of clock signals or high-frequency signals. The devices includes a reference signal generator, which is connected to an oscillator and generates at its output a reference signal with a reference frequency fx. The device also includes at least one signal processor, for example, a DDS, which is connected to the reference frequency generator via a first signal line and to which the reference signal with the reference frequency fx is supplied, and which is configured to generate an output signal having a frequency less than fx.

Generating a plurality of clock signals or high-frequency signals

In one aspect, operating a vacuum plasma process system including a plasma discharge chamber is accomplished by generating a main plasma in the discharge chamber in a first operating state, and generating an auxiliary plasma in the discharge chamber in a second operating state. Generating the main plasma includes generating a main plasma power with a first number of RF power generators, and generating an auxiliary plasma power with a second number of RF power generators, such that the second number is smaller than the first number.

Method for operating a vacuum plasma process system

Workpieces in a vacuum chamber are treated by receiving a mains voltage from a voltage supply network; generating at least one intermediate circuit voltage; generating a first RF signal of a basic frequency, and of a first phase position, from the at least one intermediate circuit voltage; generating a second RF signal of the basic frequency, and of a second phase position, from the at least one intermediate circuit voltage; and coupling the first and the second signal and generating an output signal for the vacuum chamber using a 3 dB coupler.

Vacuum plasma generator

The power output of an RF plasma supply device is controlled by producing at least a first and second RF power signal by means of a respective RF generator, coupling at least two RF power signals into a coupled RF power, and distributing the coupled RF power between a plasma power that is to be supplied to a plasma load and an equalizing power that is to be supplied to an equalizing load. The power output is controlled by adjusting the levels and/or the phase position of the RF power signals in such a manner that, for plasma power in the range between a predefined lower power limit and a predefined nominal power, an insignificant portion of the coupled RF power constitutes the equalizing power and, for plasma power below the predefined lower power limit, a significant portion of the coupled RF power constitutes the equalizing power.

RF plasma supply device

A vacuum plasma generator is used for treating workpieces in a vacuum chamber. The vacuum plasma generator includes a mains connection for connection to a voltage supply network, and at least one mains rectifier. The at least one mains rectifier is connected to at least one first converter that generates at least one intermediate circuit voltage, a first RF signal generator, a second RF signal generator, and at least one 3 dB coupler. The first RF signal generator is connected to at least one intermediate circuit voltage, for generating a first signal of a basic frequency and of a first phase position. The second RF signal generator is connected to at least one intermediate circuit voltage, for generating a second signal of the basic frequency and of a second phase position. The least one 3 dB coupler couples the first and the second signal into an output signal of the generator.

Growing community of inventors

Teningen, Germany

Christoph Hofstetter