Infineon Technologies Ag

Christoph Glacer

David Tumpold

Alfons Dehe

Hans Taddiken

Christoph Kadow

Dominik Heiss

Johannes Manz

Gueclue Onaran

Michael Schneider

Stephan Pindl

Ulrich Schmid

Martin Bartels

Hans-Dieter Wohlmuth

Matthias Markert

Manuel Dorfmeister

John Brueckner

Tobias Mittereder

Sebastian Anzinger

Mark Pavier

Werner Weber

Stefan Barzen

Ulrich Krumbein

Dominic Maier

Christian Bretthauer

Mohsin Nawaz

Paul Christopher Westmarland

Pedro Augusto Borrego Lambin Torres Amaral

Soenke Pirk

Manfred Kaltenbacher

Matthias Reinwald

Sebastian Wittmann

Guillaume Dumas

Siyuan Qi

Joachim Eder

Steffen Kubacki

Yauheni Belahurau

Hugh Richard

A MEMS photoacoustic gas sensor includes a first membrane and a second membrane opposing the first membrane and spaced apart from the first membrane by a sensing volume. The MEMS photoacoustic gas sensor includes an electromagnetic source and communication with the sensing volume to deflect the first membrane and the second membrane.

Photoacoustic gas sensor and pressure sensor

An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.

Integrated circuit, method for manufacturing an integrated circuit, wafer and method for manufacturing a wafer

An emitter for emitting radiations at a specific wavelength includes a Joule-heated emitting electrical conductor to emit radiations at an emission temperature, a controller to control a variable voltage subjected to the Joule-heated emitting electrical conductor and modulated according to a duty cycle, the duty cycle being variable between a high-average power duty cycle during hot periods, so that the Joule-heated emitting electrical conductor is subjected to a high-average power to reach and maintain the emission temperature; and a low-average power duty cycle during cold periods alternated to the hot periods, so that the Joule-heated emitting electrical conductor is subjected to a low-average power to reach a temperature smaller than the emission temperature, wherein the high-average power duty cycle and the low-average power duty cycle is defined based on a temperature-indicative measured value indicative of the ambient temperature as measured.

Method of controlling heater systems

A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

Phase change switch with multi face heater configuration

A detector cell for a photoacoustic gas sensor comprises a first layer structure, a second layer structure arranged at the first layer structure and comprising a membrane structure, and a third layer structure arranged at the second layer structure. The first layer structure and the third layer structure hermetically enclose a cavity, wherein the membrane structure is arranged in the cavity.

Detector cell for a photoacoustic gas sensor and photoacoustic gas sensor

An integrated circuit is provided. The integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch. At least a part of the phase change switch is provided below the first metallization layer. The first metallization layer is provided laterally adjacent to the phase change switch. Moreover, a method is provided for manufacturing an integrated circuit. Further provided is a wafer for manufacturing an integrated circuit, and a method for manufacturing a wafer for manufacturing an integrated circuit.

A thermal emitter includes a freestanding membrane supported by a substrate, wherein the freestanding membrane includes in a lateral extension a center section, a conductive intermediate section and a border section, wherein the conductive intermediate section laterally surrounds the center section and is electrically isolated from the center section, the conductive intermediate section including a conductive semiconductor material that is encapsulated in an insulating material, wherein the border section at least partially surrounds the intermediate section and is electrically isolated from the conductive intermediate section, and wherein a perforation is formed through the border section.

Thermal emitter with embedded heating element

An emitter structure includes a substrate with a membrane arrangement. The membrane arrangement includes at least one first membrane, a first heating path and a second heating path in different substrate planes. The first heating path and the second heating path are positioned with respect to one another such that a projection of the first heating path and a projection of the second heating path onto a common plane lie at least partly next to one another in the common plane.

Emitter structure and production method

The present disclosure concerns an emitter package for a photoacoustic sensor, the emitter package comprising a MEMS infrared radiation source for emitting pulsed infrared radiation in a first wavelength range. The MEMS infrared radiation source may be arranged on a substrate. The emitter package may further comprise a rigid wall structure being arranged on the substrate and laterally surrounding a periphery of the MEMS infrared radiation source. The emitter package may further comprise a lid structure being attached to the rigid wall structure, the lid structure comprising a filter structure for filtering the infrared radiation emitted from the MEMS infrared radiation source and for providing a filtered infrared radiation in a reduced second wavelength range.

Emitter package for a photoacoustic sensor

A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

A radiation source for obliquely launching a narrowband electromagnetic radiation into a cavity, comprises an emitter structure having a main radiation emission region for emitting the narrowband electromagnetic radiation, wherein the emitter structure is optically coupled to the cavity, and a layer element coupled to the main radiation emission region of the emitter structure, wherein the layer element comprises a radiation deflection structure configured for deflecting the radiation emission characteristic of the emitter structure with respect to the surface normal of the main radiation emission region of the emitter structure.

Radiation source and gas sensor using the radiation source

A method for measuring the concentration of a gas includes heating a first gas with a pulse of light, the pulse of light having a wavelength absorbed by the first gas, wherein the first gas exerts pressure on a flexible membrane. The method includes receiving a first signal indicating a first deflection of the membrane, wherein the first deflection is due to a change in pressure of the first gas and receiving a second signal indicating a second deflection of the membrane occurring after the first signal, wherein the second deflection is due to the change in pressure of the first gas. The method includes determining a difference between the first signal and the second signal and, based on the difference between the first signal and the second signal, determining a first concentration of the first gas.

Photoacoustic gas sensor and method for determining gas concentration from common point slope analysis

According to an embodiment, a microelectromechanical systems MEMS device includes a first membrane attached to a support structure that a first plurality of acoustic vents; a second membrane attached to the support structure that includes a second plurality of acoustic vents, where the first plurality of acoustic vents and the second plurality of acoustic vents do not overlap; and a closing mechanism coupled to the first membrane and the second membrane.

Growing community of inventors

Munich, Germany

Christoph Glacer