Siltronic Ag

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Wacker-Chemie Gmbh

Christoph Frey

Wilfried Von Ammon

Fritz Schwertfeger

Ulrich Lambert

Axel Frauenknecht

Erich Daub

Simon Zitzelsberger

Rupert Krautbauer

Dirk Zemke

Rüdiger Schmolke

Lothar Lehmann

Herbert Weidner

Holger Szillat

A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby

Method for the production of a silica glass crucible with crystalline regions from a porous silica glass green body

A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*10atcmand greater than 1*10atcm. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.

Semiconductor wafer made from silicon and method for producing the semiconductor wafer

A process for producing nitrogen-doped semiconductor wafers has the nitrogen being derived from a dopant gas which contains NH . The process includes pulling a single crystal from a melt of molten semiconductor material, feeding the dopant gas to the semiconductor material, and cutting the nitrogen-doped semiconductor wafers off the pulled single crystal. The dopant gas is fed to the semiconductor material at most until pulling begins for that part of the single crystal from which the semiconductor wafers are cut.

Process for producing nitrogen-doped semiconductor wafers

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Burghausen, Germany

Christoph Frey