Ev Group E. Thallner Gmbh

Christoph Flotgen

Markus Wimplinger

Viorel Dragoi

Thomas Plach

Thomas Wagenleitner

Thomas Glinsner

Kurt Hingerl

Thomas Wieser

Florian Schmid

Roman Anzengruber

Alexander Nones

Uwe Kriebisch

Johann Bernauer

An electrostatic substrate holder for accommodating and holding a substrate, a method for processing a substrate, and a processing plant. The electrostatic substrate holder includes a stator having electrodes that generate an electrostatic holding force for fixing the substrate.

Electrostatic substrate holder

A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Apparatus and method for bonding substrates

A device for bombarding at least one substrate with a plasma with a first electrode and a second electrode that can be arranged opposite thereto, which electrodes are formed together producing the plasma between the electrodes wherein at least one of the electrodes is formed from at least two electrode units. In addition, this invention relates to a corresponding method.

Method and device for plasma treatment of substrates

A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

Method for permanent bonding of wafers

A device and method for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate with the following features: a workspace that can be closed, gas-tight, against the environment and can be supplied with a vacuum, the workspace comprises: a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Growing community of inventors

St. Florian/Inn, Austria

Christoph Flotgen