Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Ams-osram International Gmbh

Christoph Eichler

Alfred Lell

Bernhard Stojetz

Sven Gerhard

Uwe Strauss

Adrian Stefan Avramescu

Soenke Tautz

Dimitri Dini

Wolfgang Schmid

Wolfgang Reill

Andreas Loeffler

Matthias Sabathil

Clemens Vierheilig

Andreas Löffler

Marc Schillgalies

Volker Härle

Christian Rumbolz

Georg Brüderl

Teresa Wurm

Stephan Lutgen

Matthias Peter

Jens Mueller

André Somers

Andreas Miler

Andreas Breidenassel

Peter Brick

Dominik Eisert

Karl Engl

Lutz Höppel

Martin Rudolf Behringer

Fabian Kopp

Désirée Queren

Lutz Hoeppel

Werner Bergbauer

Martin Strassburg

Harald Koenig

Teresa Lermer

Andreas Weimar

Harald König

Volker Haerle

Muhammad Ali

Uwe Strauβ

Thomas Veit

Jens Müller

Sönke Tautz

Jelena Ristic

Stephan Miller

Thomas Adlhoch

Lars Nähle

Joachim Pfeiffer

Volker Hârle

Jan Wagner

Stefanie Brüninghoff

The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

Semiconductor laser diode

In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlInGaN with 0≤x≤1, 0≤y<1 and x+y≤1, wherein at least one layer of the layer system includes an aluminum portion x≤0.05 or an indium portion y≥0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.

Edge-emitting semiconductor laser

An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.

Optoelectronic semiconductor component

A semiconductor laser () is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

Semiconductor laser and manufacturing method for a semiconductor laser

In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer which has a main extension plane and which, in operation, is adapted to generate light in an active region and to emit light via a light-outcoupling surface, the active region extending from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15&#xb0;, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.

Semiconductor light source

A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.

Method of autostereoscopic imaging and autostereoscopic illumination unit

A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes AlGaN with 0&#x2264;x1&#x2264;1 or AlInGaN with 0&#x2264;x1&#x2264;1, 0&#x2264;y1&#x3c;1 and x1+y1&#x2264;1, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1and a minimum value x1&#x3c;x1, and the second partial layer includes AlGaN with 0&#x2264;x2&#x2264;x1or AlInGaN with 0&#x2264;x2&#x2264;x1, 0&#x2264;y2&#x3c;1 and x2+y2&#x2264;1.

Laser diode

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.

A method for producing a semiconductor chip () is provided, in which, during a growth process for growing a first semiconductor layer (), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (), such that a lateral variation of a material composition of the first semiconductor layer () is produced. A semiconductor chip () is additionally provided.

Method for producing a semiconductor chip and semiconductor chip

Growing community of inventors

Tegernheim, Germany

Christoph Eichler