Epcos Ag

Qualcomm Incorporated

Snaptrack Incorporated

Rf360 Singapore Pte. Ltd.

Christoph Eggs

Werner Ruile

Markus Hauser

Markus Mayer

Edgar Schmidhammer

Ulrike Rösler

Ingo Bleyl

Wolfgang Sauer

Thomas Ebner

Michael Jakob

Stefan Berek

Karl-Christian Wagner

Hans-Peter Kirschner

Thomas Metzger

Stefan Freisleben

Andreas Link

Gudrun Henn

Marc Esquius Morote

Habbo Heinze

Ulrich Knauer

Marcel Giesen

Matthias Jungkunz

Ansgar Schäufele

Gerd Riha

Helmut Zottl

Charles Binninger

Ilya Lukashov

Guenter Scheinbacher

Thomas Telgmann

Bruno Fuerbacher

Manfred Maisch

Siegfried Menzel

Mario Spindler

Martin Woelky

Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. The dielectric region may include a different material than the protective layer.

Etch stop and protection layer for capacitor processing in electroacoustic devices

An electroacoustic component includes a substrate configured to carry acoustic waves. The electroacoustic component can be a guided bulk acoustic wave (GBAW) device, for example. A structured electric conductive layer is arranged on the substrate and an electrically dielectric layer (for example, aluminum oxide) is also arranged over the substrate.

Electricoacoustic component with structured conductor and dielectric layer

An electroacoustic transducer has reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area, inner edge areas flanking the central excitation area, outer edge areas flanking the inner edge areas, and areas of the busbar flanking the outer edge areas. The longitudinal speed of the areas can be set so that the excitation profile of a piston mode is obtained.

Electroacoustic transducer having reduced losses due to transverse emission and improved performance due to suppression of transverse modes

A method for producing a dielectric layer on the surface of a component is described. In particular embodiments, a dielectric layer having a planar surface can be generated over a substrate topography having raised structures. In a trimming process, a component property, which depends on the thickness or the third topography of the dielectric layer, is adjusted.

Method for producing a dielectric layer on a component

The present invention relates to an electroacoustic transducer which is arranged in an acoustic track (AS) and on a piezoelectric substrate () and which has two electrodes () which are arranged on the substrate () and which have interengaging electrode fingers () for exciting acoustic waves. The electrode fingers () of an electrode () are interconnected. The transducer also has means for increasing the mass occupation in a central excitation region (ZAB) which runs parallel to the acoustic track (AS), and the mass occupation in the central excitation region (ZAB) is higher than in an edge region (RB) which adjoins the central excitation region (ZAB) from both sides.

Electroacoustic transducer with reduced losses due to transverse emission and improved performance due to suppression of transverse modes

The microacoustic component has a substrate that has at least one layer (composed of a dielectric or piezoelectric material, and a metallic strip structure. The layer is composed of a dielectric or piezoelectric material and/or the metallic strip structure have/has been produced or can be produced by the atomic layer deposition method.

Method of producing a microacoustic component

A method for producing an electric component including a dielectric layer on a substrate, includes the method steps of applying a metallic layer to the substrate and oxidizing the metallic layer to form a dielectric layer, wherein at least one partial region of the metallic layer is fully oxidized through the entire thickness of the layer.

Method for producing an electric component

Guided bulk acoustic wave devices and method for manufacturing guided bulk acoustic wave devices are provided. A guided bulk acoustic wave device includes a resonator structure with a piezoelectric layer, an electrode layer for exciting guided bulk acoustic waves and a wave guide layer. The thickness of the piezoelectric layer is less than or equal to 50 &#x3bc;m.

Guided bulk acoustic wave device having reduced height and method for manufacturing

A thin-film resonator and a method for producing a thin-film component includes, for the purpose of structuring an upper first dielectric layer, a mask that comprises a second dielectric layer facing the upper dielectric layer and a photoresist layer. Initially, the photoresist layer that serves as photomask during the structuring of the second dielectric layer is structured. The structures of the second dielectric layer, together with the structures of the photoresist layer located thereabove, form a mask that is used for structuring the first dielectric layer.

Method of producing a thin-film resonator

A resonator operating with bulk acoustic waves includes a resonator stack. The resonator stack includes a resonator area configured to allow propagation of an acoustic main mode and an acoustic secondary mode. The resonator stack also includes an acoustic mirror that includes a first partial mirror for locking in the acoustic main mode in the resonator area and a second partial mirror for locking in the secondary mode in a resonator space.

Resonator functioning with acoustic volume waves

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Rattenkirchen, Germany

Christoph Eggs