Robert Boschgmbh

Christoph Duenn

Wilhelm Frey

Franz Laermer

Heiko Stahl

Hans-Peter Baer

A micromechanical component includes a substrate and a first oxide layer on the substrate, the first oxide layer having an aperture. The component further includes a conductive functional layer, which is provided on the first oxide layer in the region of the aperture, and a metal layer, which is provided on the functional layer, for producing a bond joint. A second oxide layer is provided on lateral faces of the functional layer for insulating the functional layer.

Micromechanical component having a bond joint

A method for producing micromechanical structures, in which a functional layer is deposited onto a sacrificial layer, and the sacrificial layer is removed again for the production of at least one mechanical functional element, which is characterized by a surface barrier layer, with which the functional layer begins on the sacrificial layer, and which has a different state from the remaining functional layer, is also removed at least to a considerable part, or, on the functional layer, one layer or a plurality of layers having at least approximately the same properties with respect to stress in the layer or layers such as the surface barrier layer is (are) applied. Additionally, a micromechanical structure having a functional layer in which the functional layer is constructed in such a way that the stresses are neutralized or no stress gradient appears.

Method for producing micromechanical structures and a micromechanical structure

A method for producing a microsystem that has, situated on a substrate, a first functional layer that includes a conductive area and a sublayer. Situated on the first functional layer is a second mechanical functional layer, which is first initially applied onto a sacrificial layer situated and structured on the first functional layer. In addition, a layer is situated on the side of the sublayer facing away from the conductive area. The layer constitutes a protective layer on the first functional layer that acts in areas during a sacrificial layer etching process so that during removal of the sacrificial layer no etching of the areas of the first functional layer covered by the protective layer occurs, and that in the region of the areas of the first functional layer implemented without the protective layer the sublayer is removed essentially selectively to the conductive area at the same time as the sacrificial layer. Further, a method is described for producing integrated microsystems having silicon-germanium functional layers, sacrificial layers containing germanium, and open metal surfaces. The sacrificial layers containing germanium are at least partially removed in an etching solution, a pH value of the etching solution being kept at least approximately neutral during the etching procedure using a buffer.

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Tuebingen, Germany

Christoph Duenn