Texas Instruments Corporation

Texas Instruments Incorporated Deutschland, Gmbh

Christoph Dirnecker

Scott G Balster

Jeffrey A Babcock

Angelo Pinto

Michael Schober

Badih El-Kareh

Philipp Steinmann

Wolfgang Ploss

Scott Balster

Alfred Haeusler

Berthold Georg Staufer

Karsten Jens Spinger

Joerg Haussmann

Franz Stingl

Rupert Wagner

Philipp Steinman

An electronic device comprising a semiconductor structure having a back end capacitor and a back end thin film resistor and a method of manufacturing the same. The semiconductor structure includes a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. The bottom plate and the resistor body are laterally spaced apart portions of the same thin film layer. The bottom plate further includes a conductive layer overlying the thin film layer. A second dielectric layer is disposed on the conductive layer of the bottom plate of the capacitor. A top plate of the capacitor is disposed on the second dielectric layer.

Integrated thinfilm resistor and MIM capacitor with a low serial resistance

An integrated circuit contains three thin film resistors over a dielectric layer. The first resistor body includes only a bottom thin film layer and the first resistor heads include the bottom thin film layer, a middle thin film layer and a top thin film layer. The second resistor body and heads include all three thin film layers. The third resistor body does not include the middle thin film layer. The three resistors are formed using two etch masks.

Three precision resistors of different sheet resistance at same level

An electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and an integrated circuit back end thin film resistor and a method of manufacturing the same is provided. The semiconductor structure comprises a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. Furthermore, there is a second dielectric layer which is disposed on the bottom plate of the capacitor and on top of the thin film resistor body. A top plate of the capacitor is disposed on the second dielectric layer in a region of the second dielectric layer which is defined by the lateral dimensions of the bottom plate of the capacitor. The bottom plate and the resistor body are laterally spaced apart layers which are both disposed on the first dielectric layer and which are composed of a same thin film material.

Electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and thin film resistor and method of manufacturing the same

The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR.

Method and electronic device for a simplified integration of high precision thinfilm resistors

A method of forming an integrated deep and shallow trench isolation structure comprises depositing a hard mask on a film stack having a plurality of layers formed on a substrate such that the hard mask is deposited on a furthermost layer from the substrate, imprinting a first pattern into the hard mask to define an open end of a first trench, imprinting a second pattern into the hard mask to define an open end of a second trench, and etching into the film stack the first trench to a first depth and the second trench to a second depth such that the first trench and the second trench each define a blind aperture in the surface of the film stack.

Method of manufacturing integrated deep and shallow trench isolation structures

A method of manufacturing an integrated circuit comprises depositing a electrically resistive layer of a material for serving as a thin film resistor (TFR), depositing an electrically insulating layer on the resistor layer, removing the electrically insulating layer from outside an electrically active area of the resistor layer corresponding to a target TFR area, and depositing an electrically conductive layer of an electrically conductive material such that the conductive layer overlaps the target TFR area and the conductive layer electrically contacts the resistor layer outside the target TFR area.

Method of manufacturing an integrated circuit

An integrated stacked capacitor comprises a first capacitor film () of polycrystalline silicide, a second capacitor film () and a first dielectric () sandwiched between the first capacitor film () and second capacitor film (). A second dielectric () and a third capacitor film () are provided. The second dielectric () is sandwiched between the second capacitor film () and third capacitor film (). A method for fabrication of an integrated stacked capacitor comprises the following sequence of steps: applying a polysilicide layer () to form the first capacitor film (); applying a first dielectric (); applying a first metallization layer () to form the second capacitor film (); applying a second dielectric (); and applying a second metallization layer () to form the third capacitor film ().

Integrated stacked capacitor and method of fabricating same

The invention relates to a stacked capacitor () comprising a silicon base plate (), a poly-silicon center plate () arranged above the base plate (), a lower gate-oxide dielectric () arranged between the base plate () and the center plate (), a cover plate () made of a metallic conductor and arranged above the center plate (), and an upper dielectric () arranged between the center plate () and the cover plate (). The cover plate () and the base plate () are electrically connected to each other and together form a first capacitor electrode. The center plate () forms a second capacitor electrode. The invention further relates to an integrated circuit with such a stacked capacitor, as well as to a method for fabrication of a stacked capacitor as part of a CMOS process.

Stacked capacitor and method of fabricating same

An integrated stacked capacitor comprises a first capacitor film () of polycrystalline silicide (poly), a second capacitor film () and a first dielectric () sandwiched between the first capacitor film () and second capacitor film (). A second dielectric () and a third capacitor film () are provided. The second dielectric () is sandwiched between the second capacitor film () and third capacitor film (). A method for fabrication of an integrated stacked capacitor comprises the following sequence of steps: applying a polysilicide layer () to form the first capacitor film (); applying a first dielectric (); applying a first metallization layer () to form the second capacitor film (); applying a second dielectric (); and applying a second metallization layer () to form the third capacitor film ().

A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.

Structure of semiconductor device with sinker contact region

Stacked capacitor and method for fabricating same

Method for manufacturing a semiconductor device with sinker contact region

A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. At least part of the active region is removed to form a shallow trench opening. A dielectric layer is formed proximate the active region at least partially within the shallow trench opening. At least part of the dielectric layer is removed to form a collector contact region. A collector contact may be formed at the collector contact region. The collector contact may be operable to electrically contact the buried layer.

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Eching, Germany

Christoph Dirnecker