Precitec Optronik Gmbh

Jurca Optoelektronik Gmbh

Tox-dübel-technik Gmbh

Dusemund Pte. Ltd.

Christoph Dietz

Martin Schoenleber

Martin Schönleber

Markus Kogel-Hollacher

Berthold Michelt

Stefan Birmanns

Claus Dusemund

Markus Koegel-Hollacher

Stephan André

Philipp Rohrmann

Stephan Weiss

Gabriel Palzer

Jean-Francois Pichot

Dieter Schmid

Bernd Karotsch

Martin Schonleber

Daniel Wilhelm

Martin SCHÖNLEBER

Hubert Aleker

An optical measuring device includes a measuring head with an imaging optical unit and an evaluation unit, wherein the measuring head is connected to the evaluation unit by way of two light-guiding fibers, wherein the evaluation unit includes a light source whose light is guided through the first light-guiding fiber into the measuring head and wherein light reflected by the measurement object is guided back through the measuring head and into a second light-guiding fiber by means of a beam splitter, in such a way that outgoing and returning light are separated, wherein the fiber ends are in mutually conjugate positions, wherein the beam splitter and the fiber ends are arranged together in a connector that is separably connected to the measuring head.

Chromatic confocal measuring device

A distance measuring device comprises a measuring head, the measuring head having an optical measuring system for carrying out an optical measurement process on a measurement object by means of at least one measuring light beam formed from a broad-band measuring light. The measuring head further has a liquid guide with a liquid inlet and a liquid outlet for producing a jet of liquid directed at the measurement object, the liquid guide being designed such that in certain sections at least the measuring light beam runs essentially along the jet of liquid. The measuring head further has a flow element with a laminar flow channel, the flow element being designed such that the at least one measuring light beam is able to reach the measurement object by passing through the laminar flow channel.

Distance measuring device

A method for measuring the depth of the vapour cavity during an industrial machining process employs a high-energy beam. An optical measuring beam is directed towards the base of a vapour cavity. An optical coherence tomograph generates interference factors or other raw measurement data from reflections of the measurement beam. An evaluation device generates undisturbed measurement data, wherein raw measurement data that is generated at different times is processed together in the course of a mathematical operation. This operation can be a subtraction or a division. Slowly changing interference factors can thus be eliminated. An end value for the distance to the base of the vapour cavity is calculated from the undisturbed measurement data using a filter. As a result, the depth of the vapour cavity can be determined, in the knowledge of the distance at a part of the surface of the work piece that is not exposed to the high-energy beam.

Method and device for measuring the depth of the vapor capillary during a machining process with a high-energy beam

A method for determining parameters for the position and orientation of the cornea of an eye and involves the steps of generating linear structures on the iris and/or sclera of the eye, having a camera capture a first image of the eye including the linear structures, and determining, on the basis of the first image, a distance and an orientation of the linear structures in relation to the camera.

Method and apparatus for determining the position and/or the orientation of an eye

A measuring device includes a light source that emits light of a plurality of wavelengths, in particular a continuous spectrum, a first confocal diaphragm, through which light from the light source passes, and an optical illuminating/imaging system having a first splitting optical element designed as a prism or grating. The optical illuminating/imaging system, which is designed such that the light enters the first splitting optical element collimated, includes a first lens system having at least one first lens that is spatially separated from the first splitting optical element, the effective focal length of the first lens system being significantly different for different wavelengths, and the optical illuminating/imaging system being designed such that focus points of different wavelengths are formed at different locations along a line segment. The measuring device is configured to measure an object that intersects with the line segment and reflects at least a part of the light.

Optical measuring device

A method for controlled machining of a workpiece includes focusing a laser light beam on a target point of the workpiece to generate a laser focus point. An optical distance measuring device gathers measuring data to determine a distance between the target point and a laser target optics. The workpiece is positioned in relation to the laser focus point based on the distance measuring data gathered. The distance measuring device is a confocal optical distance measuring device having a measuring light source for generating a measuring light and having a variable-focal-length measuring lens system. The focal length of the variable-focal-length measuring lens system is varied over time to gather distance measuring data at different focal length values of the variable-focal-length measuring lens system. A device for controlled machining includes a laser light source, a laser target optics, a distance measuring device, a positioning device, and an evaluation and control unit.

Method and device for the controlled machining of a workpiece

A chromatic confocal measuring device includes a light source, which emits light of a plurality of wavelengths, and a first beam splitter, via which the light from the light source into an imaging optical unit having chromatic aberration on. Light reflected from the measurement object is imaged by the imaging optical unit and the first beam splitter onto a first confocal detection stop arrangement, such that the first confocal detection stop arrangement functions as a confocal aperture. Light incident through the first detection stop arrangement is detected and evaluated by a first detection device. The measuring device has a first slit stop, which functions as a confocal aperture of the measuring device. The measuring device additionally includes a second detection device and a second beam splitter, wherein the second beam splitter splits the light reflected from the measurement object into a first and a second partial beam, which image the same spatial region of the measurement object. The first detection device detects light of the first partial beam by a linear detector and evaluates total intensities over all wavelengths in order to create a total intensity profile and/or a total intensity image therefrom. The second detection device at the same time spectrally splits light of the second partial beam and evaluates intensities of the light of a plurality of individual wavelengths.

Device and method for optically measuring a measurement object

Apparatus for monitoring a thickness of a silicon wafer with a highly-doped layer at least at a backside of the silicon wafer is provided. The apparatus has a source configured to emit coherent light of multiple wavelengths. Moreover, the apparatus comprises a measuring head configured to be contactlessly positioned adjacent the silicon wafer and configured to illuminate at least a portion of the silicon wafer with the coherent light and to receive at least a portion of radiation reflected by the silicon wafer. Additionally, the apparatus comprises a spectrometer, a beam splitter and an evaluation device. The evaluation device is configured to determine a thickness of the silicon wafer by analyzing the radiation reflected by the silicon wafer by an optical coherence tomography process. The coherent light is emitted multiple wavelengths in a bandwidth b around a central wavelength w.

Apparatus and method for monitoring a thickness of a silicon wafer with a highly doped layer

According to the invention, a monitoring device () is created for monitoring a thinning of at least one semiconductor wafer () in a wet etching unit (), wherein the monitoring device () comprises a light source (), which is designed to emit coherent light of a light wave band for which the semiconductor wafer () is optically transparent. The monitoring device () further comprises a measuring head (), which is arranged contact-free with respect to a surface of the semiconductor wafer () to be etched, wherein the measuring head () is designed to irradiate the semiconductor wafer () with the coherent light of the light wave band and to receive radiation () reflected by the semiconductor wafer (). Moreover, the monitoring device () comprises a spectrometer () and a beam splitter, via which the coherent light of the light wave band is directed to the measuring head () and the reflected radiation is directed to the spectrometer (). The monitoring device () further comprises an evaluation unit (), wherein the evaluation unit () is designed to determine a thickness d(t) of the semiconductor wafer () from the radiation () reflected by the semiconductor wafer () during thinning of the semiconductor wafer () by means of a method that is selected from the group consisting of a 1D-se FDOCT method, a 1D-te FDOCT method and a 1D-se TDOCT method.

Monitoring apparatus and method for in-situ measurement of wafer thicknesses for monitoring the thinning of semiconductor wafers and thinning apparatus comprising a wet etching apparatus and a monitoring apparatus

Apparatus for monitoring a thickness of a silicon wafer with a highly-doped layer at least at a backside of the silicon wafer is provided. The apparatus has a source configured to emit coherent light of multiple, wavelengths. Moreover, the apparatus comprises a measuring head configured to be contactlessly positioned adjacent the silicon wafer and configured to illuminate at least a portion of the silicon wafer with the coherent light and to receive at least a portion of radiation reflected by the silicon wafer. Additionally, the apparatus comprises a spectrometer, a beam splitter and an evaluation device. The evaluation device is configured to determine a thickness of the silicon wafer by analyzing the radiation reflected by the silicon wafer by an optical coherence tomography process. The coherent light is emitted multiple wavelengths in a bandwidth b around a central wavelength w.

The invention relates to a machining device () comprising at least one machining head () designed to provide at least one high-energy machining beam (), especially an electron or laser beam. Such a machining device is used to remove material from workpieces () or for connecting workpieces () by bonding, especially by means of welding. According to the invention, at least one scanning device () designed as an optical coherence tomograph and provided for surface scanning is associated with the machining head (). The invention also relates to a method for machining material using a high-energy machining beam for scanning surface areas of a workpiece which is machined, not yet machined, or being machined, by means of an optical coherence tomograph.

Machining device and method for machining material

The quality of a weld is usually monitored via the different wavelength radiation issuing from the weld point. During the welding of workpieces, however, this radiation (S) is also modulated by the instantaneous width (b) of the gap existing between the workpieces. To avoid the generation of unnecessary fault signals (F) on the one hand and excessive tolerance bands for the permitted signal range on the other hand, the invention proposes that a correction formula (.increment.S(B)) which reproduces the dependency of the radiation signals (S) on the gap width (B) be produced in a preliminary test. The gap width (B) in the weld point is defined during welding. A correction value (.increment.S(B)) is defined during the welding process on the basis of the correction formula (.increment.S(B)) and the instantaneous gap width (B) in the weld point and the limit values (MAx(B.sub.0), MIN(B.sub.0) previously defined for a gap width zero are displaced by this correction value (.increment.S(B)).

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Obertshausen, Germany

Christoph Dietz