Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Bayerische Motoren Werke Aktiengesellschaft

Christoph Bayer

Andreas Schletz

Uwe Waltrich

Thomas Schimanek

Steffen Ziesche

Rene Richter

Hoang Linh Bach

Florian Hilpert

Christian Lenz

Maximillian Hofmann

Disclosed is a method of manufacturing a power semiconductor component arrangement or a power semiconductor component housing. The method involves a sintering process in which the plurality of layer-shaped unsintered ceramic substrates are converted into a sintered ceramic single layer or multilayer substrate or into a sintered ceramic single layer or multilayer interconnect device. Also disclosed is a power semiconductor component arrangement or a power semiconductor component housing that can be manufactured using the above method. Further disclosed are the uses of the power semiconductor component arrangement or the power semiconductor component housing.

Method of manufacturing a power semiconductor component arrangement or a power semiconductor component housing

In a method for increasing the electrical functionality, and/or service life, of power electronic modules, the power electronic circuit carrier, and/or the metallisation applied onto the power electronic circuit carrier, and/or a base plate connected, or to be connected, to a rear face of the power electronic circuit carrier, is finely structured by means of local material removal with at least one laser beam, so as to reduce thermomechanical stresses occurring during the production or operation of the module. In an alternative form of embodiment, the metallisation applied onto the front face of the power electronic circuit carrier is structured, or an already created structure is refined or supplemented, by means of local material removal with laser radiation, so as to achieve a prescribed electrical functionality of the metallisation.

Method for increasing the electrical functionality, and/or service life, of power electronic modules

A power semiconductor module, as well as a corresponding method of manufacture, are provided. The power semiconductor module has a plurality of power switches. A first subset of the power switches forms part of a first electrical current branch. A second subset of the power switches forms part of a second electrical current branch. Within the current branches, the associated power switches are arranged symmetrically with respect to the DC voltage contacts and are connected in such a way that a current density which is formed in the individual current paths which are respectively assigned to one of the power switches is at least substantially homogeneously distributed during the high frequency operation of the power semiconductor module and/or in the operation of the power switches with high voltage gradients.

Power converter module and method for production thereof

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Erlangen, Germany

Christoph Bayer