Siemens Aktiengesellschaft

Infineon Technologies Ag

Siemens Aktiengesellchaft

Christofer Hierold

Thomas Scheiter

Markus Biebl

Helmut Klose

Ulrich Naher

Max Steger

Robert Aigner

Walter Gumbrecht

Klaus Abraham-Fuchs

Reinhold Noe

Hergen Kapels

Ulrich Naeher

Josef Willer

Wolfgang Werner

Stefan Kolb

Frank Schmidt

Herbert Schwarzbauer

Klaus-G&uuml;nter Oppermann

Hans-J&ouml;rg Timme

Dieter Maier-Schneider

Gerd Hribernig

Wolfgang Marius

Ralf Catanescu

Adrian Berthold

A reference image for pattern recognition tasks is produced. Overlapping individual images are combined to form an overall image and the overall image is used as the reference image. This allows the size of reference images for fingerprints, for instance, which has hitherto been governed by the sensor area, to be increased. The recognition rate can thus be improved.

Method for producing a reference image for pattern recognition tasks

A first capacitor electrode and at least part of a second capacitor electrode of a capacitor are produced in depressions of an auxiliary layer by electroplating. The auxiliary layer is then removed and at least partially replaced by a capacitor dielectric. The first capacitor electrode and the part of the second capacitor electrode may be composed of a metal, for example platinum. The capacitor dielectric can be composed, for example, of barium-strontium-titanate.

Integrated circuit configuration having at least two capacitors and method for manufacturing an integrated circuit configuration

A method is disclosed for producing a micromechanical component. The micromechanical component has sensor holes, wherein at least one component protective layer and/or a spacer coating is applied on the component before separating the wafer into chips. The component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer.

Micromechanical component protected from environmental influences

The valve seat is located between an inlet opening and an outlet opening, with a connecting stub against which an elastic membrane presses. The membrane is disposed above a cavity and formed by a part of a polysilicon layer. When a medium flows onto the side of the membrane facing the connecting stub, the membrane is lifted off the connecting stub and is pulled into the cavity, so that the medium can flow through the valve. The membrane can be stiffened by a stamp-like attachment, in order to ensure that the valve opens uniformly.

Microvalve

A semiconductor component comprising a layer of semiconductor material that is doped region-by-region in alternating fashion for positive and negative electrical conductivities. This layer is arranged perpendicular to layer surfaces between thermally conductive layers in such a way that the junctions between two successive regions having different electrical conductivities are electrically insulated outwardly, and are alternately in thermal contact with one of the thermally conductive layers and are thermally insulated from the respective other thermally conductive layer.

Electric voltage source for semiconductor components

Micromechanical sensor

Rotation rate sensor

Semiconductor chip

A capacitance to be measured is connected together with three further capacitances to form a bridge circuit, in which each two of the capacitors are connected in series, and these two series circuits are connected in parallel to one another, and which replaces a part of the input stage of a .SIGMA.-.DELTA. modulator. As inputs of this bridge circuit, terminals are provided at the ends of these series circuits, and as outputs terminals are respectively provided between the capacitors connected one after the other in series. In a sensor realized thereby, two capacitively measuring sensor elements of the same type are used. These capacitors are built into the bridge circuit together with two equally large reference capacitors in such a way that exactly one measurement capacitor and one reference capacitor is La connected is connected to each input and to each output of the bridge circuit.

Capacitively measuring sensor and readout circuit

A power semiconductor component having a cell structure includes a metallic resistance track that is insulated from the semiconductor body of the power semiconductor component and from a control electrode by a non-conductive layer. The resistance track is provided in a lateral region between cells of the power semiconductor. The active area of the component is not made smaller by the presence of the resistance track and the resistance track is produced simultaneously with a metallic layer of the component which provides electrical contact with a main electrode of the power semiconductor so that no additional manufacturing steps are required for adding the resistive track.

Power semiconductor component with monolithically integrated precision

In a method for manufacturing a combination of a pressure sensor and an electrochemical sensor, a basic structure for an ISFET is manufactured on a substrate made of silicon. After depositing a nitride layer as a pH-sensitive layer, the region of the ISFET is covered with a protective layer. In a region provided for a pressure sensor, a structured layer of polysilicon, provided as a membrane, is manufactured above a hollow space. Additional method steps for manufacturing electrical terminals of the sensors and, if required, additional integrated components, and for manufacturing printed conductor planes, are carried out in the context of a CMOS process. IMOX layers in the region of the gas sensor are wet-chemically removed down to the nitride layer. A platinum contact and an additional protective layer made of a PECVD oxide and a PECVD nitride are deposited. Additional layer structures for the gas sensor are manufactured. The pressure sensor is etched free either before the gas sensor is etched free, or after the deposition of the additional protective layer.

Method for manufacturing a combination of a pressure sensor and an

An acceleration sensor has a mass part movably attached over a substrate with pairs of electrodes arranged relative to the mass part so that one electrode of each pair is under the mass part and the other electrode of that pair is arranged above the mass part. The electrodes are attached immovably to the substrate. Controllable electrical voltages can be applied such via an electronic drive circuit to the electrically conductively doped mass part and to these electrodes so that excursions of the mass part can be electrostatically compensated and, at the same time, the magnitude of inertial forces acting on the mass part, and thus the magnitude of accelerations, can be measured.

Acceleration sensor

A flow-through cell for extra-corporeal measurement of blood parameters has a pressure sensor arranged in a measurement chamber. The pressure sensor has an active pressure sensor part and an inactive pressure sensor part. The inactive pressure sensor part is constructed identically to the active pressure sensor part, and is insulated from the pressure prevailing in the measurement chamber by a rigid covering. The active and inactive sensor parts produce respective electrical signals which are subject to the same disturbing influences, so that by subtracting the signal of the inactive sensor part from the signal of the active sensor part, a measured value free of disturbing influences is obtained.

Flow-through measurement cell for extracorporeal measurement of blood

A component having a movable micro mechanical function element arranged in a cavity having a cover layer supported by webs or pillar-like supports is provided. The movable element is potentially covered with a termination layer for closing the etching holes present in the cover layer. Electrical terminals of the movable part, the cover layer and doped regions produced in the substrate as a cooperating electrode enable the realization of an acceleration sensor that is easy to mount in a housing.

Micromechanical semiconductor components and manufacturing method

Semiconductor component with monolithically integrated electronic circuits and monolithically integrated sensor/actuator, whereby the sensor/actuator is manufactured with methods of surface micromachining in a sensor layer (3) of polysilicon that is structured, for example, with sensor webs (6), and these sensor webs (6) are thermally insulated from a silicon substrate (1) by a cavity (4) that is produced in a sacrificial layer (2) and is closed gas-tight toward the outside with a closure layer (5).

Growing community of inventors

Munich, Germany

Christofer Hierold