Alcatel

Centre National De La Recherche Scientifique

Sorbonne Université

Avanex Corporation

Université De Paris

Observatoire De Paris

Cy Cergy Paris Universite

Christine Chaumont

Franck Mallecot

Antonina Plais

Arnaud Leroy

Hisao Nakajima

Joël Jacquet

Didier Decoster

Thibaut Vacelet

Samir Beldi

Joe Harari

Faouzi Boussaha

A method for manufacturing a superconducting LC-type resonator of the type including at least one high-resistivity substrate on which are printed an inductive meander, a first so-called lower electrode and a second so-called upper electrode arranged opposite the first so as to form together a capacitor connected in parallel with the inductive meander, as well as inductive coupling means dedicated to the resonator, in which a sacrificial aluminium layer is deposited between the first and second electrodes. Also disclosed is the superconducting LC-type resonator thus obtained and the use of such a resonator for detecting the noise of a millimetre photon.

Method for manufacturing a superconducting LC-type resonator and superconducting resonator thus obtained

A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.

Multi section electrooptic monolithic component

The invention concerns a semiconductor opto-electronic component comprising at least two optically active structures ( ), at least one of which consists of a detector ( ), characterized in that the detector or detectors ( ) comprise a first active portion ( ) able to detect a signal at a given wavelength and a second inactive portion ( ) only slightly sensitive to the signal to be detected and exposed to the non-guided stray light conveyed in the component.

Multi-section opto-electronic component

The invention relates to a semiconductor electro-optical monolithic component. The component is made up of at least two sections, each of which has a respective waveguide, the waveguides being etched in the form of ridges, disposed in line, and buried in a cladding layer. The sections are electrically isolated from one other by a resistive zone. At the interface between two sections, the waveguides are locally of an extended width not less than the width of the resistive zone.

Multi-section electro-optical monolithic component

A semiconductor electro-optical monolithic component includes at least first and second sections (,) each having respectively a first wave guide (,) and a second wave guide (,) transmitting light, the wave guides being etched in the form of strips and confined between an upper cladding layer (,) doped with carriers of a first type and a lower layer (,A,,B) doped with carriers of a second type, a third section (,) being disposed between the first and second sections (,) and having a third guide not transmitting light, the third guide being disposed so as to couple the first guide (,) to the said second guide (,). An absorbent layer (,), having a photoluminescence wavelength at least equal to the smallest wavelength of the waves propagating in the first and second wave guides (,), is placed in the said lower layer (,A,,B) doped with carriers of the second type; the said lower layer (,A,,B) having an index lower than that of the absorbent layer (,) and that of the said second and third guides (,).

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Villejuif, France

Christine Chaumont