Infineon Technologies Ag

Christina Yeong

Alexander Heinrich

Bernhard Weidgans

Evelyn Napetschnig

Thomas Behrens

Catharina Wille

Kok Yau Chua

Matthias Steiert

Chu Hua Goh

Woon Yau Lim

A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

Semiconductor device including a solder compound containing a compound Sn/Sb

The electronic device comprises a semiconductor chip comprising a first main face, a second main face opposite to the first main face, side faces connecting the first and second main faces, and a sensor element or actuator element disposed at the first main face, and a substrate, wherein the semiconductor chip is disposed above the substrate, the first main face of the semiconductor chip facing the substrate, wherein the substrate comprises a substrate opening, the substrate opening permitting passage of signals to the sensor element or from the actuator element.

Electronic sensor device including a flip-chip mounted semiconductor chip and a substrate with an opening

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Johor, Malaysia

Christina Yeong