University of California

Japan Science and Technology Agency

Christina Ye Chen

Shuji Nakamura

Steven P DenBaars

Umesh Kumar Mishra

Daniel Bryce Thompson

Lee McCarthy

Akihiko Murai

An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.

Method for fabricating a direct wafer bonded optoelectronic device

(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method

Growing community of inventors

Santa Clara, CA, United States of America

Christina Ye Chen