Robert Boschgmbh

Christina Leinenbach

Franz Laermer

Tino Fuchs

Ando Feyh

Ulrike Scholz

Ricardo Ehrenpfordt

Silvia Kronmueller

Andre Gerlach

Mathias Bruendel

Sonja Knies

Kathrin Van Teeffelen

Christoph Schelling

Axel Franke

Jochen Zoellin

Frank Reichenbach

Jochen Reinmuth

Thomas Buck

Volker Becker

Heiko Stahl

Torsten Kramer

Christian Rettig

Marco Lammer

Franz Lärmer

Silvia Kronmüller

Gery O`BRIEN

Kathrin Teeffelen

Nils Rasmus Behnel

A micromechanical functional apparatus, particularly a loudspeaker apparatus, includes a substrate, at least one circuit chip mounted on the substrate, and an enveloping package in which the circuit chip is packaged. The functional apparatus further includes a micromechanical functional arrangement, particularly a loudspeaker arrangement having a plurality of micromechanical loudspeakers, which is mounted on the enveloping package. A covering device is mounted above the micromechanical functional arrangement, particularly the loudspeaker arrangement, opposite the enveloping package. A method is implemented to manufacture the micromechanical functional apparatus.

Micromechanical functional apparatus, particularly a loudspeaker apparatus, and appropriate method of manufacture

A micromechanical functional apparatus, particularly a loudspeaker apparatus, includes a substrate having a top and an underside and at least one circuit chip mounted on the underside in a first cavity. The apparatus further includes a micromechanical functional arrangement, particularly a loudspeaker arrangement, having a plurality of micromechanical loudspeakers mounted on the top in a second cavity. A covering device is mounted above the micromechanical functional arrangement on the top. An appropriate method is implemented to manufacture the micromechanical functional apparatus.

A MEMS chip package includes a first chip, a second chip, a first coupling element, and a first redistribution layer. The first chip has a first chip surface and a second chip surface, which is opposite the first chip surface. The second chip has a first chip surface and a second chip surface, which is opposite the first chip surface. The first coupling element couples the first chip surface of the second chip to the first chip surface of the first chip, so that a first cavity is defined between the first chip and the second chip. The first redistribution layer is mounted on the second chip surface of the second chip and is configured to provide contact with a substrate.

MEMS chip package and method for manufacturing an MEMS chip package

A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClFand/or ClF, a gas selected from the group including Cland/or HCl being added to the etching gas.

Method for etching a layer on a silicon semiconductor substrate

A component having a robust, but acoustically sensitive microphone structure is provided and a simple and cost-effective method for its production. This microphone structure includes an acoustically active diaphragm, which functions as deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counter element, which functions as counter electrode of the microphone capacitor, and an arrangement for detecting and analyzing the capacitance changes of the microphone capacitor. The diaphragm is realized in a diaphragm layer above the semiconductor substrate of the component and covers a sound opening in the substrate rear. The counter element is developed in a further layer above the diaphragm. This further layer generally extends across the entire component surface and compensates level differences, so that the entire component surface is largely planar according to this additional layer. This allows a foil to be applied on the layer configuration of the microphone structures exposed in the wafer composite, which makes it possible to dice up the components in a standard sawing process.

Component having a micromechanical microphone structure, and method for its production

A method for producing a component, and a component, in particular a micromechanical and/or microfluidic and/or microelectronic component, is provided, the component including at least one patterned material region, and in a first step the patterned material region is produced in that microparticles of a first material are embedded in a matrix of a second material, and in a second step the patterned material region is rendered porous by etching using a dry etching method or a gas-phase etching method.

Method for producing a component, in particular a micromechanical and/or microfluidic and/or microelectronic component, and component

A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by thermal oxidation of a SiGe mixed semiconductor layer.

Method for producing micromechanical patterns having a relief-like sidewall outline shape or an adjustable angle of inclination

A method for producing a micromechanical component is described. The method includes providing a substrate having a layer system including an insulating material situated on the substrate, a conductive layer section and a protective layer structure connected to the conductive layer section, which borders a section of the insulating material. The method furthermore includes carrying out an isotropic etching process for removing a part of the insulating material, the conductive layer section and the protective layer structure preventing the removal of the bordered section of the insulating material; and a structural element being developed, which includes the conductive layer section, the protective layer structure and the bordered section of the insulating material.

Method for producing a micromechanical component

A method for manufacturing separated micromechanical components situated on a silicon substrate includes the following steps of a) providing separation trenches on the substrate via an anisotropic plasma deep etching method, b) irradiating the area of the silicon substrate which forms the base of the separation trenches using laser light, the silicon substrate being converted from a crystalline state into an at least partially amorphous state by the irradiation in this area, and c) inducing mechanical stresses in the substrate. In one specific embodiment, cavities are etched simultaneously with the etching of the separation trenches. The etching depths can be controlled via the RIE lag effect.

Method for manufacturing separated micromechanical components situated on a silicon substrate and components manufactured therefrom

A sensor element is provided for sensing accelerations in three spatial directions, which furnishes reliable measurement results and moreover can be implemented economically and with a small configuration. The sensor element encompasses at least one seismic mass deflectable in three spatial directions, a diaphragm structure that functions as a suspension mount for the seismic mass, and at least one stationary counterelectrode for capacitive sensing of the deflections of the diaphragm structure. According to the exemplary embodiments and/or exemplary methods of the present invention, the diaphragm structure encompasses at least four electrode regions, electrically separated from one another, that are mechanically coupled via the seismic mass.

Sensor element for sensing accelerations in three spatial directions

A method for etching a layer that is to be removed on a substrate, in which a SiGelayer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF. The etching behavior of the SiGelayer can be controlled via the Ge portion in the SiGelayer. The etching method is particularly well-suited for manufacturing self-supporting structures in a micromechanical sensor and for manufacturing such self-supporting structures in a closed hollow space, because the SiGelayer, as a sacrificial layer or filling layer, is etched highly selectively relative to silicon.

Method for etching a layer on a substrate

In a method for manufacturing a micromechanical chip, a sacrificial layer and an epitaxy layer are initially applied to a semiconductor substrate to produce a layer stack. An opening is subsequently introduced into the epitaxy layer from the front side of the layer stack. In order to electrically insulate the subsequent filling of the opening using a conductive contact layer from the material of the epitaxy layer, the walls of the opening are provided with an insulating layer. For removing the sacrificial layer and thus for producing the chip, separation trenches are subsequently etched through the epitaxy layer to the sacrificial layer also from the front side of the layer stack, which separation trenches also delimit the lateral extension of the chip.

Method for manufacturing a micromechanical chip and a component having a chip of this type

A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClFetching through micropores in the silicon cap, an etching attack on the silicon cap is prevented, namely, either by particularly selective (approximately 10,000:1 or higher) adjustment of the etching process itself, or by using the finding that the oxide of a germanium-rich layer, in contrast to oxidized porous silicon, is not stable but instead may be easily dissolved, to protect the silicon cap.

Method for producing a micromechanical component having a thin-layer capping

A micromechanical component having a conductive substrate, an elastically deflectable diaphragm including at least one conductive layer, which is provided over a front side of the substrate, the conductive layer being electrically insulated from the substrate, a hollow space, which is provided between the substrate and the diaphragm and is filled with a medium, and a plurality of perforation openings, which run under the diaphragm through the substrate, the perforation openings providing access to the hollow space from a back surface of the substrate, so that a volume of the medium located in the hollow space may change when the diaphragm is deflected. Also described is a corresponding manufacturing method.

Micromechanical component and corresponding method for its manufacture

A micromechanical component having a substrate conductive in at least some regions; an elastically deflectable diaphragm, which is conductive in at least some regions, arches over a front side of the substrate, and is electrically insulated from the substrate, the diaphragm having an inner region (I; I') and an edge region (RB; RB&#x2032;); and a hollow space (H), which is provided between the substrate () and the diaphragm (M); the inner region (I; I&#x2032;) having a cross-section that is modified in comparison with the edge region (RB; RB&#x2032;), which means that the bending of the inner region (I; I&#x2032;) is less than that in the case of an identical cross-section.

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Ensdorf, Germany

Christina Leinenbach