Nxp B.v.

Christian Zenz

Tonny Kamphuis

Hartmut Buenning

Leonardus Antonius Elisabeth Van Gemert

Sascha Moeller

Bodin Kasemset

Ernst Eiper

Reinhard Rogy

Reinard Rogy

Patrick Schoengrundner

Franz Amtmann

Antonius Hendrikus Jozef Kamphuis

Roland Brandl

Joachim Heinz Schober

Guido Albermann

Johannes Cobussen

Johannes Wilhelmus Van Rijckevorsel

David Ceccarelli

Peeradech Khunpukdee

Boudewijn Van Blokland

Dietmar Nessmann

The disclosure relates to a dual-interface integrated circuit (IC) card module for use in a dual-interface IC card. Embodiments disclosed include a dual-interface integrated circuit card module (), the module comprising: a substrate () having first and second opposing surfaces; a contact pad () on the first surface of the substrate; an integrated circuit () on the second surface of the substrate (), the integrated circuit () having electrical connections to the contact pad () through the substrate (); and a pair of antenna pads () disposed in recesses () in the second surface of the substrate () and electrically connected to corresponding antenna connections on the integrated circuit ().

Dual-interface IC card module

A saw bow is provided and designed such that the conductors of the saw bow will break at a predictable location when using modern dicing techniques. This results in a break in the circuit provided by the saw bow, with any exposed conductors not being on the die side. Further, by providing a known breaking point in the saw bow, modern dicing techniques such as plasma dicing can be used, thereby allowing for the saw lane to be made narrower, which will in turn increase the number of wafers that can be included on a wafer.

Integrated circuit saw bow break point

The disclosure relates to a dual-interface integrated circuit (IC) card. Embodiments disclosed include a dual-interface card () comprising: a card body () containing an antenna (), the antenna having first and second antenna connections; and a dual-interface integrated circuit card module () comprising: a substrate () having first and second opposing surfaces; a contact area () on the first surface of the substrate (), the contact area () comprising a plurality of contact pads () and first and second routing connections () each having a first end and a second end; an integrated circuit () on the second surface of the substrate (); electrical connections through the substrate () connecting the integrated circuit () to the plurality of contact pads () and to the first end of each of the first and second routing connections (); and first and second antenna connectors () disposed in respective first and second holes () in the substrate () and in electrical contact with the second end of the respective first and second routing connections, wherein the first and second antenna connectors () of the card module are electrically connected to the first and second antenna connections of the card body ().

Dual-interface IC card

In a method of producing a transponder (T, T, T), a substrate () is provided. The substrate () comprises a first area (), a second area () adjacent to the first area (), and a first electric contact () adjacent to the second area (). An electric device () is placed in or on the first area (), preferably without touching the first electric contact (). Subsequently, a conductive glue () is applied on the second area () and on the first electric contact () so that the conductive glue () electrically couples the first electric contact () with the electric device ().

Method of producing a transponder and a transponder

Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure by applying an adhesive material to partially cover an overlapping area of the at least one antenna contact and the substrate, which is a component of a dual-interface IC card. Other embodiments are also described.

Dual-interface IC card components and method for manufacturing the dual-interface IC card components

In a method of manufacturing an antenna () formed on a substrate () an antenna structure () is formed on the substrate (). The antenna structure () comprises an area () which initially is electrically short-circuited and is designed to be turned into an antenna contact () to be contacted with contacts () of an integrated circuit (IC). The antenna contact () is formed by mechanically separating the electrically short-circuitedarea () particularly utilizing cutting or stamping means ().

Antenna or a strap for accommodating an integrated circuit, an antenna on a substrate, a strap for an integrated circuit and a transponder

Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure, which is a component of a dual-interface IC card. Other embodiments are also described.

Dual interface IC card components and method for manufacturing the dual-interface IC card components

Consistent with an example embodiment, there is a semiconductor device, with an active device having a front-side surface and a backside surface; the semiconductor device of an overall thickness, comprises an active device with circuitry defined on the front-side surface, the front-side surface having an area. The back-side of the active device has recesses f a partial depth of the active device thickness and a width of about the partial depth, the recesses surrounding the active device at vertical edges. There is a protective layer of a thickness on to the backside surface of the active device, the protective material having an area greater than the first area and having a stand-off distance. The vertical edges have the protective layer filling the recesses flush with the vertical edges. A stand-off distance of the protective material is a function of the semiconductor device thickness and the tangent of an angle (&#x3b8;) of tooling impact upon a vertical face the semiconductor device.

Using a double-cut for mechanical protection of a wafer-level chip scale package (WLCSP)

Consistent with an example embodiment, there is a method for assembling a wafer level chip scale processed (WLCSP) wafer; The wafer has a topside surface and an back-side surface, and a plurality of device die having electrical contacts on the topside surface. The method comprises back-grinding, to a thickness, the back-side surface the wafer. A protective layer of a thickness is molded onto the backside of the wafer. The wafer is mounted onto a sawing foil; along saw lanes of the plurality of device die, the wafer is sawed, the sawing occurring with a blade of a first kerf and to a depth of the thickness of the back-ground wafer. Again, the wafer is sawed along the saw lanes of the plurality of device die, the sawing occurring with a blade of a second kerf, the second kerf narrower than the first kerf, and sawing to a depth of the thickness of the protective layer. The plurality of device die are separated into individual device die. Each individual device die has a protective layer on the back-side, the protective layer having a stand-off distance from a vertical edge of the individual device die.

Protection of a wafer-level chip scale package (WLCSP)

Consistent with an example embodiment, there is semiconductor device assembled to resist mechanical damage. The semiconductor device comprises an active circuit defined on a top surface, contact areas providing electrical connection to the active circuit. There is a pedestal structure upon which the active circuit is mounted on an opposite bottom surface; the pedestal structure has an area smaller than the area of the active device. An encapsulation, consisting of a molding compound, surrounds the sides and the underside of the active device and it surrounds the contact areas. The encapsulation provides a resilient surface protecting the active device from mechanical damage. A feature of the embodiment is that the contact areas may have solder bumps defined thereon.

Encapsulated wafer-level chip scale (WLSCP) pedestal packaging

In a method of producing a transponder, a substrate is provided. The substrate comprises a first area, a second area adjacent to the first area, and a first electric contact adjacent to the second area. An electric device is placed in or on the first area, preferably without touching the first electric contact. Subsequently, a conductive glue is applied on the second area and on the first electric contact so that the conductive glue electrically couples the first electric contact with the electric device.

Various aspects of the disclosure are directed to integrated circuit (IC) die leadframe packages. In accordance with one or more embodiments, a stainless steel leadframe apparatus has a polymer-based layer that adheres to both stainless steel and IC die encapsulation, with the stainless steel conducting signals/data between respective surfaces for communicating with the packaged IC die. In some embodiments, the apparatus includes the IC die adhered to the polymer-based layer via an adhesive, wire bonds coupled to the stainless steel leadframe for passing the signals/data, and an encapsulation epoxy that encapsulates the IC die and wire bonds.

IC package with stainless steel leadframe

In a method of producing an integrated circuit () for a transponder () a photoresist layer () is applied on a first surface () of a semiconductor device (). A patterned mask () is generated by lithographically patterning the photoresist layer (), so that the photoresist layer () comprises at least one first via (). The patterned mask () comprises a second surface () facing away from the first surface (). The first via () is filled with a first bump () by depositing the first bump () on the first surface (). A conductive structure () is formed on the second surface () of the patterned mask (). The conductive structure () is electrically connected to the first bump ().

Integrated circuit transponder, method of producing an integrated circuit and method of producing a transponder

The invention relates to a chip card (CC), in particular a SIM card, inserted for operation into a holder (HH), which holder (HH) is equipped with electrical device contacts (GK) and a press-on device (AE). The chip card (CC) comprises a substrate (S), a contact field (K), a chip (C), and a single-piece encapsulation (V). According to the invention, the encapsulation (V) has a thickness (dV) which ensures that, on insertion of the chip card (CC), the encapsulation (V) has body contact with the press-on device (AE), the contact field (K) has body contact with the device contacts (GK), and the contact field (K) is reliably electrically contacted to the device contacts (GK). No further carrier material (T) is provided.

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Graz, Austria

Christian Zenz