Basf Se Corporation

Georg-august-universität Göttingen

Christian Volkmann

Kerstin Schierle-Arndt

Hagen Wilmer

Torben Adermann

Daniel Loeffler

Jan Gerkens

Sven Schneider

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R, Rare an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R, R, and Rare an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3. 

Process for the generation of thin inorganic films

Growing community of inventors

Goettingen, Germany

Christian Volkmann