Infineon Technologies Ag

Cree Gmbh

Christian Schuberth

Peter Singerl

David Seebacher

Martin Mataln

Haedong Jang

Richard Wilson

Timothy Canning

Thomas Magesacher

Ji Zhao

Alexander Komposch

Franz Dielacher

Bayaner Arigong

Rongguo Zhou

Andrea Del Chiaro

Tim Canning

In sonic examples, a method includes pre-stressing a flange, heating the flange to a die-attach temperature, and attaching a die to the flange at the die-attach temperature using a die-attach material. In some examples, the flange includes a metal material, the die-attach temperature may be at least two hundred degrees Celsius, and the die-attach material may include solder and/or an adhesive. In some examples, the method includes cooling the semiconductor die and metal flange to a room temperature after attaching the semiconductor die to the metal flange at the die-attach temperature using a die-attach material.

Die-attach method to compensate for thermal expansion

A device includes at least one electrically conductive structure and at least one stripline. The stripline includes stripline sections that are connected to one another in a series connection between a first terminal and a second terminal. A first subset of the stripline sections is arranged on a first side of the conductive structure and a second subset of the stripline sections is arranged on a second side of the conductive structure. The device also includes at least one conductive connection between the first subset of the stripline sections and the second subset of the stripline sections, wherein the at least one conductive connection is isolated from the at least one electrically conductive structure.

Device having at least one subset of stripline sections on opposite sides of an electrically conductive structure and configured to have positive coupling

A circuit includes a first power transistor stage internally configured to function as a voltage-controlled current source, a second power transistor stage having an input impedance which varies as a function of input power and an interstage matching network coupling an output of the first power transistor stage to an input of the second power transistor stage. The interstage matching network is configured to provide impedance inversion between the input of the second power transistor stage and the output of the first power transistor stage. The impedance inversion provided by the interstage matching network transforms the first power transistor stage from functioning as a voltage-controlled current source to functioning as a voltage-controlled voltage source at the input of the second power transistor stage.

Interstage matching network

A passive electrical component includes a substrate. A first metallization layer is formed on the substrate. A first dielectric layer is formed on the first metallization layer The first dielectric layer has a lower thermal conductivity than the substrate. A second metallization layer is formed on the first dielectric layer. An electrically conductive via provides an electrical connection between a first section of the first metallization layer and a second section of the second metallization layer. A thermally conductive via provides a thermally conductive path between the second section and the substrate. The thermally conductive via provides an open circuit termination to the second section of the second metallization layer.

Passive electrical component with thermal via

A peaking amplifier is disclosed. The peaking amplifier includes a driver stage, a final stage, and an interstage matching network. The driver stage has a load impedance and is configured to generate a driver output based on an input signal. The final stage has a final stage input impedance and is configured to generate a peaking output based on the driver output. The interstage matching network is coupled to the driver stage and the final stage. The interstage matching network is configured to transform the final stage input impedance to the load impedance for the driver stage when the peaking amplifier is ON and to provide a short to an input of the final stage when the peaking amplifier is in an OFF state.

Devices and methods that facilitate power amplifier off state performance

An amplifier circuit includes an RF input port, an RF output port, a reference potential port, and an RF amplifier having an input terminal and a first output terminal. An output impedance matching network electrically couples the first output terminal to the RF output port. A first inductor is electrically connected in series between the first output terminal and the RF output port, a first LC resonator is directly electrically connected between the first output terminal and the reference potential port, and a second LC resonator is directly electrically connected between the first output terminal and the reference potential port. The first LC resonator is configured to compensate for an output capacitance of the RF amplifier at a center frequency of the RF signal. The second LC resonator is configured to compensate for a second order harmonic of the RF signal.

Compact class-F chip and wire matching topology

A non-linear pre-distortion engine maintaining constant peak power at its output is disclosed. The engine includes a compression estimator, a crest factor reduction processor, a digital pre-distorter and a power amplifier. The compression estimator is configured to generate a compression estimate based on an input signal and a feedback signal. The feedback signal is based on an RF output signal. The crest factor reduction processor is configured to reduce a crest factor of the input signal to generate a crest factor reduced signal based on the compression estimate. The digital pre-distorter is configured to apply a pre-distortion to the crest factor reduced signal after an initial phase and generate a pre-distorted signal based on pre-distortion parameters. The power amplifier is configured to amplify the pre-distorted signal to generate the RF output signal. The operation of the chain consisting of pre-distorter and power amplifier is substantially linear and the pre-distorter maintains constant peak power at its output, which eliminates unwanted avalanche or pre-distorter blow-up issues.

Devices and methods for adaptive crest factor reduction in dynamic predistortion

Embodiments relate to outphasing amplifiers and amplification. One example system includes a signal splitter configured to receive an input signal and output a plurality of signals, wherein the signal splitter shifts each of the plurality of signals by a distinct phase based at least in part on a power of the input signal; a plurality of power amplifiers (PAs), each configured to amplify a distinct signal of the plurality of signals to generate a distinct amplified signal; a plurality of input matching networks, each coupled to a distinct PA of the plurality of PAs and configured to transform an input impedance of the coupled PA to an outphasing load condition based on the distinct signal the coupled PA is configured to amplify; and a combiner configured to combine the plurality of distinct amplified signals to generate an amplified input signal.

Outphasing power amplifier signal splitter using next stage input impedance and multiple biasing

A nonlinear distorter is configured to mitigate nonlinearity from a nonlinear component of a nonlinear system. The nonlinear distorter operates to model the nonlinearity as a function of a piecewise polynomial approximation applied to segments of a nonlinear function of the nonlinearity. The nonlinear distorter generates a model output that decreases the nonlinearity of the nonlinear component.

Digital modulator non-linearity correction

A method for providing cross point information includes: providing an input signal having amplitude and phase information; interpolating between a first point of the input signal and a second point of the input signal to provide cross point information between the first point and the second point; and providing a pulse-width modulated signal based on the input signal and the cross point information.

Methods and devices for providing cross point information

In accordance with an embodiment, a system includes a first amplifier and a first bandpass filter having an input coupled in series with an output of the first amplifier, and an output configured to be coupled to a load. The bandpass filter has a lower input impedance at an in-band center frequency than at out-of-band frequencies, and the first amplifier is configured to receive a pulse width modulated waveform filtered according to a first transfer function that attenuates sidebands of the pulse width modulated waveform.

System and method for a power amplifier

In an embodiment, a method of producing a multi-level RF signal includes producing plurality of pulse-width modulated signals based on an input signal. The method further includes driving a corresponding plurality of parallel amplifiers with the plurality of pulse-width modulated signals by setting a parallel amplifier to have a first output impedance when a corresponding pulse-width modulated signal is in an active state and setting the parallel amplifier to have a second output impedance when the corresponding pulse-width is in an inactive state. The method also includes phase shifting the outputs of the plurality of parallel amplifiers, wherein phase shifting transforms the second output impedance into a third impedance that is higher than the second output impedance, and combining the phase shifted outputs.

System and method for generating a radio frequency pulse-width modulated signal

A pulse-width modulator (PWM) includes a plurality of comparators for comparing an input signal with a plurality of reference signals and for providing a plurality of corresponding comparison signals. The pulse-width modulator also includes a combinational logic for receiving the plurality of comparison signals and for generating a plurality of binary pulse-width modulation signals on the basis of the plurality of comparison signals. At most only a currently selected binary pulse-width modulation signal of the binary pulse-width modulation signals is at a first signal level at a time. The currently selected binary pulse-width modulation signal is associated to a specific reference signal of the plurality of reference signals which is currently closest to the input signal among the plurality of reference signals in terms of a given amplitude relation between the plurality of reference signals and the input signal.

Pulse-width modulator and methods of implementing and using the same

In accordance with an embodiment, a system includes a first transistor and a second transistor. The first transistor has a first input node coupled to a first signal input, a first output node coupled to a first common node, and a first reference node coupled to a first reference voltage, and the second transistor has a second input node coupled to second signal input, a second output node coupled to an output of the system, and a second reference node coupled to the first common node. The system further includes a first switch switchably coupling the first common node to a second reference voltage.

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Villach-Landskron, Austria

Christian Schuberth