Tdk-micronas Gmbh

Micronas Gmbh

Albert-ludwigs-universitaet Freiburg

Christian Sander

Martin Cornils

Oliver Paul

An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.

SOI semiconductor structure and method for manufacturing an SOI semiconductor structure

A Hall effect sensor with multiple Hall effect elements, each of the Hall effect elements having a first contact terminal, a second contact terminal, and a third contact terminal arranged along a straight line. The multiple Hall effect elements are electrically connected in series in a closed circuit. The second contact terminals of the Hall effect elements are supply voltage connections or Hall voltage pickoffs, and the applicable second contact terminal of the Hall effect element is a center contact of the Hall effect element. The Hall effect elements form two pairs, and the Hall effect elements of one pair each measure the same component of a magnetic field and an operating current is impressed on the series circuit in the two Hall effect elements of this one pair, and a supply voltage is applied to the Hall effect elements of the other pair.

Hall effect sensor

A hall effect sensor device implemented on a semiconductor body, having a first Hall effect sensor and a second Hall effect sensor, each of the two Hall effect sensors has at least four individual Hall effect elements and the four Hall effect elements are connected in series, and each Hall effect element has three contact terminals arranged in a row, and the series connection is implemented through a coupling or interconnection of the two outer contact terminals. Semiconductor well regions of the individual Hall effect elements are separated from one another, and the first Hall effect sensor and the second Hall effect sensor are connected in parallel, whereby a middle contact terminal of a Hall effect element of the first Hall effect sensor is connected in each case with a middle contact terminal of a Hall effect element of the second Hall effect sensor.

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Freiburg, Germany

Christian Sander