Robert Boschgmbh

Christian Rettig

Ando Feyh

Axel Franke

Jochen Reinmuth

Christoph Schelling

Mirko Hattass

Reinhard Neul

Daniel Christoph Meisel

Heiko Stahl

Alexander Buhmann

Ingo Herrmann

Christina Leinenbach

Achim Trautmann

Edda Sommer

Manuel Engesser

An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.

Infrared sensor device and method for producing an infrared sensor device

A piezoresistive micromechanical sensor component includes a substrate, a seismic mass, at least one piezoresistive bar, and a measuring device. The seismic mass is suspended from the substrate such that it can be deflected. The at least one piezoresistive bar is provided between the substrate and the seismic mass and is subject to a change in resistance when the seismic mass is deflected. The at least one piezoresistive bar has a lateral and/or upper and/or lower conductor track which at least partially covers the piezoresistive bar and extends into the region of the substrate. The measuring device is electrically connected to the substrate and to the conductor track and is configured to measure the change in resistance over a circuit path which runs from the substrate through the piezoresistive bar and from the piezoresistive bar through the lateral and/or upper and/or lower conductor track.

Piezoresistive micromechanical sensor component and corresponding measuring method

A method for producing a micromechanical component is described. The method includes providing a substrate having a layer system including an insulating material situated on the substrate, a conductive layer section and a protective layer structure connected to the conductive layer section, which borders a section of the insulating material. The method furthermore includes carrying out an isotropic etching process for removing a part of the insulating material, the conductive layer section and the protective layer structure preventing the removal of the bordered section of the insulating material; and a structural element being developed, which includes the conductive layer section, the protective layer structure and the bordered section of the insulating material.

Method for producing a micromechanical component

A microsystem has a first cavity which is sealed off from the surroundings and a second cavity which is sealed off from the surroundings. The first cavity is bounded by a first bond joint and the second cavity is bounded by a second bond joint. Either the first bond joint or the second bond joint is a eutectic bond joint or a diffusion-soldered joint.

Microsystem

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Reutlingen, Germany

Christian Rettig