Robert Boschgmbh

Infineon Technologies Ag

Christian Pluntke

Hartmut Michel

Alfred Goerlach

Thomas Jacke

Peter Flohrs

Timm Hoehr

Ning Qu

Frank Wolter

Rainer Topp

Anton Mindl

Holger Ruething

Joachim Joos

Bernd Bireckoven

Volkmar Denner

Holger Heinisch

Guenther Koffler

Christoph Thienel

Christian Foerster

Manfred Thanner

Shike Hu

Holger RÜTHING

Günther Koffler

A semiconductor system for a current sensor in a power semiconductor includes: on a substrate, a multiple arrangement of transistor cells having an insulated gate electrode, whose emitter terminals are connected in a first region via a first conductive layer to at least one output terminal and whose emitter terminals are connected in a second region via a second conductive layer to at least one sensor terminal, which is situated outside of a first cell region boundary, which encloses the transistor cells of the first region and the second region, a trench structure belonging to the first cell region boundary being developed between the transistor cells of the second region and the sensor terminal.

Semiconductor system for a current sensor in a power semiconductor

A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.

Power switch component having improved temperature distribution

A circuit configuration for switching current flow through an ignition coil, in which the switching process is able to be executed by at least one first transistor that is controllable by a control signal which is able to be supplied via a control signal input of the circuit configuration, and the control signal input is connected to at least one variable resistor.

Circuit configuration for switching current flow through an ignition coil

An integrated circuit having a power transistor and a circuit arrangement functioning in a temperature dependant manner and thermally coupled to the power transitor. The integrated circuit is used to reliably disconnect the power transistor in the event of overheating., particularly in the case of inductive loads, and does not reactivate the power transistor until, for example, an edge change has occurred at the base terminal of the integrated circuit.

Circuit for protection from excess temperature

A vertical semiconductor component has an integrated switching device, which delivers an electric value correlating with the rear potential. The semiconductor component includes a doping region with a hole, which is free of the doping atoms of the doping region. The hole, when properly sized and contacted, can supply an electric current correlating with the rear potential.

Integrated vertical semiconductor component

Integrated circuit for current control of a power transistor

Monolithically integrated planar semi-conductor arrangement with

The invention relates to a monolithically integrated semiconductor arrangement, where from the first main surface a first zone (p) and a second zone (n.sup.+) are diffused into a substrate (2), which is weakly doped (substrate region n.sup.-) under a first main surface (3) and is more strongly doped (substrate region n.sup.+) under a second main surface (4). An insulating passivation layer is attached to the first main surface (3), on top of which a metallic cover electrode (D) is located, which covers adjacent substrate regions (n.sup.-) and the edge areas of the first zone (p) and the second zone (n.sup.+). In accordance with the invention, at least one additional zone (.nu.) of the same type of conductivity as the associated zone (n.sup.+), but with weaker doping, is diffused in for increasing the break-through voltage, and is connected to the zone (n.sup.+), does not contact the other zone (p) and prevents the zone (n.sup.+) from directly bordering the substrate (n.sup.-) underneath the cover electrode (D).

Monolithically integrated semiconductor arrangement with a cover

An electronic switch, in particularly a transistor, has at least one barrier layer extending between regions of different doping concentrations within a semiconductor and is characterized in that the barrier layer has at least one voltage limiting zone (Z) having a radius of curvature (R) less than or at most equal to the diffusion depth (x.sub.JB) of the diffused junction.

Electronic switch with a definite breakdown voltage

The invention relates to a method of determining the position of a p-n junction or the depth of penetration of the diffused electrode in the case of semiconductor devices produced by planar technology. According to the invention, a test pattern which comprises N pairs of windows, the spacing of which increases from pair to pair, is included in exposure. During the diffusion operation, the tubs produced overlap in the pairs of windows lying relatively close together, touch in one pair of windows (n.sub.o) and are separate from each other in pairs of windows lying relatively far apart. With the aid of a resistance measurement, the pair of windows (n.sub.o) in which the two tubs are still just touching is established, from which the lateral depth of penetration Y.sub.j is obtained as half the spacing of this pair of windows. From the lateral depth of penetration, the vertical depth of penetration X.sub.j can be established by means of the relationship X.sub.j =C.multidot.Y.sub.j. In developments of the method, there is also specified a correction possibility for the difference between layout dimension and etching dimension as well as a further possibility of establishing the exact value of the lateral depth of penetration Y.sub.jo. In the case of this possibility, the doping of the material which is diffused into can be determined.

Process for determining the position of a p-n transition

Growing community of inventors

Hechingen, Germany

Christian Pluntke