Micron Technology Incorporated

Christian N Mohr

Scott Eugene Smith

Timothy B Cowles

Christopher Gordon Wieduwilt

Vijayakrishna J Vankayala

Jennifer E Taylor

Dennis G Montierth

John E Riley

Gregg D Wolff

C Omar Benitez

Sujeet V Ayyapureddi

Gary L Howe

Yoshinori Fujiwara

Randall J Rooney

Joshua E Alzheimer

Jack Riley

Manoj Vijay

Memory devices may have internal circuitry that employs voltages higher and/or lower than voltages provided by an external power source. Charge pumps are DC/DC converters that may be used to generate the higher voltages internally. The number of available charge pumps in a memory device may be conservatively dimensioned to be high, in some systems to protect yields. Some of the available charge pumps may be disabled during manufacturing or testing to reduce the number of active charge pumps. The testing process may employ dedicated logic in the memory device and the disabling may employ fuse circuitry.

Charge pump supply optimization and noise reduction method for logic systems

Embodiments of the disclosure are drawn to apparatuses and methods for bad row mode. The memory may prevent proper access operations (e.g., read operations) from being performed on a selected bad row of the memory as part of a bad row mode. For example, the memory may store a bad row address and when an access address matches the bad row address, may suppress one or more signals, change data read from the address, or combinations thereof. The bad row mode may be used to provide a positive control for post package repair (PPR) operations on the memory. A controller may enter the memory into bad row mode and then test the memory to determine if the selected bad row can be located and repaired via PPR.

Apparatuses and methods for bad row mode

Semiconductor devices having through-stack interconnects for facilitating connectivity testing, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a stack of semiconductor dies and a plurality of through-stack interconnects extending through the stack to electrically couple the semiconductor dies. The interconnects include functional interconnects and at least one test interconnect. The test interconnect is positioned in a portion of the stack more prone to connectivity defects than the functional interconnects. Accordingly, testing the connectivity of the test interconnect can provide an indication of the connectivity of the functional interconnects.

Semiconductor devices having through-stack interconnects for facilitating connectivity testing

Apparatuses and methods for trimming input buffers based on identified mismatches. An example apparatus includes an input buffer having a first input stage circuit configured to receive a first signal, a second input stage circuit configured to receive a second signal, and an output stage coupled to the first and second input stage circuits and configured to provide an output signal. The first input stage circuit includes serially-coupled transistor pairs that are each coupled between the output stage and a bias voltage. Each of the plurality of serially-coupled transistors pairs are selectively enabled in response to a respective enable signal. The apparatus further including a trim circuit coupled to the first input stage circuit and comprising a plurality of programmable components. The trim circuit is configured to be programmed to provide the respective enable signals based on a detected transition voltage offset relative to a target transition voltage.

Apparatuses and method for trimming input buffers based on identified mismatches

Embodiments presented herein are directed to testing and/or debugging a memory device of a memory module (e.g., a dual in-line memory module (DIMM)) without having to remove the DIMM from a corresponding computing device and without having to interrupt operation of the computing device. A particular memory device (e.g., DRAM) may be identified for testing and/or debugging based on a failure message. However, the failure message may not identify a specific location or hardware of the module that caused the failure. Embodiments presented herein provide techniques to obtain data for analysis to determine and/or deliver a cause of the failure while reducing or eliminating downtime of the computing device. Test modes to do so may include a synchronous test mode, an asynchronous test mode, and an analog compare mode. A test mode may be selected based on the failure or a signal/function of the DRAM to be tested or debugged.

Internal data availability for system debugging

An apparatus may include a memory array, a test circuit coupled to the memory array, a counter circuit coupled to the test circuit and an input/output (I/O) circuit coupled to the counter circuit. During a test operation, the test circuit may receive blocks of data from the memory array and compare the data to detect errors in the blocks of data. The counter circuit may increment a count value in response to detection of an error by the test circuit, and the I/O circuit may provide the count value to an output. The test circuit may also provide test comparison data based on the received blocks of data, and the I/O circuit may provide one of the count value and the test comparison data to the output.

System and method for counting fail bit and reading out the same

In a memory device, an on-die register is provided that is configured to store a row address as well as a column address of a memory cell that fails a test. Storing the row address frees testing from being limited to activating at one time only rows related to a common redundant segment. Storing the row address also guides repair using segmented redundancy. As an addition or alternative, information may be stored in an anti-fuse bank that is designed to provide access to a redundant cell but has not yet enabled access to that cell. If the information stored in the anti-fuse bank relates to the failure of the redundant cell, such information may be used to avoid repairing with that redundant cell.

Growing community of inventors

Plano, TX, United States of America

Christian N Mohr