Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Christian Müller

Lorenzo Zini

Roland Heinrich Enzmann

Werner Kuhlmann

Dirk Sossenheimer

A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.

Radiation-emitting semiconductor chip

A method of operating an optoelectronic proximity sensor including a radiation-emitting component, a radiation-detecting component and a control unit includes: operating the radiation-emitting component with a pulsed current, wherein the pulsed current of the radiation-emitting component has an on time and an off time during a measurement period, and causing the control unit to evaluate a detector signal of the radiation-detecting component during the on time and ending the on time if the detector signal exceeds a threshold value, wherein the ratio of the on time to the measurement period is less than 1/10.

Method for operating an optoelectronic proximity sensor and optoelectronic proximity sensor

The invention relates to a unit () for determining the dominant light source type in electromagnetic radiation () incident on the unit () and generated from a plurality of light sources of different types. The unit comprises at least one first photodiode () designed to detect electromagnetic radiation in the visible spectral range and to generate a first output signal (). The unit comprises at least one second photodiode () designed to detect electromagnetic radiation in the infrared spectral range and to generate a second output signal (). The unit comprises at least one calculation unit () designed to derive a quotient result () and a frequency result () from the first () and second () output signals. The frequency result () provides information about the presence or absence of signal components in a predetermined frequency range contained in the electromagnetic radiation. The unit comprises at least one evaluation unit () designed to derive the dominant light source type from the quotient result () and the frequency result ().

Unit for determining the type of a dominating light source by means of two photodiodes

A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 &#x3bc;m. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.

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Deuerling, Germany

Christian Müller