Plansee Se

Christian Linke

Thomas Scherer

Andre Dronhofer

Gerhard Dipl-Ing Leichtfried

Martin Kathrein

Wolfram Knabl

Manfred Sulik

Peter Schumacher

Peter Abenthung

Enrico Franzke

Elisabeth Eidenberger-Schober

Jörg Winkler

Jiehua Li

Michael O`SULLIVAN

Wolfgang KÖCK

Tobias Will

Walter Mutschlechner

André Dronhofer

Hartmut Wolf

A process for producing a W&#x2014;Ni sputtering target includes providing the sputtering target with 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section.

Process for producing and using a W&#x2014;Ni sputtering target

A target for a cathode sputtering system has a tubular target body made of a sputtering material and at least one connector piece, which is connected to the target body and projects from the target body, for attaching the target body to the cathode sputtering system. The target body is connected to the at least one connector piece in a vacuum-tight manner and the two are rotationally fixed relative to one another. At least one damper element is provided between the at least one connector piece and the target body.

Tubular target

A tubular target for cathode atomization does not have a backing tube and it is made of molybdenum or a molybdenum alloy. The target has an inner surface which is in contact at least in certain regions with a cooling medium, wherein at least one region of the inner surface is separated from the cooling medium by at least one protective device. By way of example, the protective device may be in the form of a polymer layer. The tubular target exhibits outstanding long-term stability.

Tubular target having a protective device

A connection piece for a tubular target which has a cylindrical inner surface and a cylindrical outer surface and at least one magnetic insert. The position of the magnetic insert is adjustable along the axial direction of the connection piece on at least an inner surface or outer surface of the connection piece.

Connector piece for a tubular target

A sputtering target is composed of an alloy consisting of 5 to 70 at % of at least one element from the group of (Ga, In) and 0.1 to 15 at % of Na, the remainder being Cu and typical impurities. The sputtering target includes at least one intermetallic Na-containing phase.

Cu&#x2014;Ga&#x2014;In&#x2014;Na target

A Ga-containing and Cu-containing sputtering target has a Ga content of from 30 to 68 at %. The sputtering target contains only CuGaas Ga-containing and Cu-containing intermetallic phase or the proportion by volume of CuGais greater than the proportion by volume of CuGa. The sputtering target is advantageously produced by spark plasma sintering or cold gas spraying. Compared to CuGa, CuGais very soft, which aids the production of defect-free sputtering targets having homogeneous sputtering behavior.

Copper-gallium sputtering target

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Ehenbichl, Austria

Christian Linke