Infineon Technologies Ag

Christian Lenzhofer

Franz Hirler

Ulrich Glaser

A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient &#x3b1;of a breakdown voltage Vof the first pn junction and a temperature coefficient &#x3b1;of a breakdown voltage Vof the second pn junction have a same algebraic sign and satisfy 0.6&#xd7;&#x3b1;&#x3c;&#x3b1;&#x3c;1.1&#xd7;&#x3b1;at T=300 K, wherein V&#x3c;V.

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Klagenfurt, Austria

Christian Lenzhofer