Robert Bosch

Christian Lemier

Florian Schoen

Torsten Kramer

Markus Niemann

Udo Kaess

A sensor element for thermal anemometry includes a semiconductor substrate and a thin-film diaphragm attached to the semiconductor substrate and having a front side and a rear side. A resistive heating element and a temperature-dependent resistor are attached to the front side of the thin-film diaphragm. In the area of the rear side of the thin-film diaphragm, the semiconductor substrate has a first recess. A silicon layer including a recess which merges with the first recess of the semiconductor substrate is located between the thin-film diaphragm and the semiconductor substrate.

Sensor element for thermal anemometry

A microstructured sensor for detecting IR radiation includes: one measuring channel having a measuring diaphragm, on which a first sensitive detector surface is implemented for the absorption of a first IR radiation; and one reference channel having a reference diaphragm, on which a second sensitive detector surface is implemented for the absorption of a second IR radiation. A measuring structure, e.g., a thermopile measuring structure as a series circuit made of thermocouple pairs, is implemented between the measuring diaphragm and the reference diaphragm for measuring a temperature differential between the measuring diaphragm and the reference diaphragm. First and second thermal contacts lie alternately on the two diaphragms.

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Reutlingen, Germany

Christian Lemier