Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Christian Lauer

Alvaro Gomez-Iglesias

Harald König

Harald Koenig

Alexander Bachmann

Guenther Groenninger

Hubert Halbritter

Uwe Strauss

Bruno Jentzsch

Wolfgang Reill

Martin Müller

Uwe Strauβ

Ann Russell

Günther Grönninger

Bernd Mayer

Tomasz Swietlik

Peter Fuchs

Martin Reufer

Thomas Falck

Michael Furitsch

An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.

Semiconductor laser

A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.

Semiconductor laser diode

An edge-emitting semiconductor laser includes a semiconductor structure having a waveguide layer with an active layer, the waveguide layer extending in a longitudinal direction between first and second side facets of the semiconductor structure, the semiconductor structure has a tapering region adjacent to the first side facet, a thickness of the waveguide layer in the tapering region increases longitudinally, the waveguide layer is arranged between first and second cladding layers, a thickness of the second cladding layer in the tapering region of the semiconductor structure increases longitudinally, the tapering region includes first and second subregions, the first subregion is arranged closer to the first side facet than the second subregion, thickness of the waveguide layer increases longitudinally in the first subregion, thickness of the waveguide layer is constant in the longitudinal direction in the second subregion, and thickness of the second cladding layer increases longitudinally in the second subregion.

Edge-emitting semiconductor laser and method for the production thereof

A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 &#x3bc;m emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.

Edge emitting semiconductor laser

An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure is formed in the semiconductor body and includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer including a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer.

An edge emitting semiconductor laser comprising an active, radiation-generating zone (), and an common waveguide (), which is suitable for guiding the radiation generated in the active zone () within the semiconductor laser. The common waveguide () comprises a first n-doped layer () and a second n-doped layer (), which is arranged between the first n-doped layer () and the active zone (), wherein the refractive index nof the second n-doped layer () is greater than the refractive index nof the first n-doped layer () by a value dn.

Edge-emitting semiconductor laser

An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.

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Wuppertal, Germany

Christian Lauer