Infineon Technologies Ag

Christian Krenn

Hans-Joachim Schulze

Johannes Baumgartl

Thomas Christian Neidhart

Manfred Kotek

Markus Harfmann

Juergen Steinbrenner

Markus Kahn

Uwe Hoeckele

Herbert Gietler

Hubert Maier

Kurt Matoy

Karl Mayer

Guenter Zieger

Helmut Schoenherr

Marco Koitz

Franz Kleinbichler

Christoph Brunner

Guenther Zoth

Elfriede Kraxner Wellenzohn

Silvana Fister

A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

Passivation layer and method of making a passivation layer

A semiconductor arrangement is produced by providing a semiconductor carrier of a second conduction type and epitaxially growing a first semiconductor zone of a first conduction type on the carrier. The first semiconductor zone includes a semiconductor base material doped with first and second dopants which are made of different substances which are both different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes a decrease or an increase of a lattice constant of the first semiconductor zone. The second dopant causes one or both of hardening of the first semiconductor zone and an increase of the lattice constant of the first semiconductor zone if the first dopant causes a decrease, or a decrease of the lattice constant of the first semiconductor zone if the first dopant causes an increase.

Method of producing a semiconductor arrangement

A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second dopants are different substances and also different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes either a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone. The second dopant may be electrically active, and may be of the same doping type as the first dopant, causes one or both of: a hardening of the first semiconductor zone; an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively.

Semiconductor arrangement

In various embodiments, a method of processing a contact pad may include providing a contact pad, a topmost layer of the contact pad containing aluminum or an aluminum alloy, at least part of the topmost layer of the contact pad being exposed; subjecting the contact pad to a thermally activated atmosphere containing water or reactive components of water.

Method of processing a contact pad

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Viktring, Austria

Christian Krenn