Infineon Technologies Ag

Christian Illemann

Matthias Kuenle

Karl Pilch

Herbert Priess

Francisco Javier Santos Rodriguez

Manfred Engelhardt

Johannes Baumgartl

Olaf Storbeck

Olaf Fiedler

Mathias Male

Thomas Huber

A liquid-dispensing system includes at least one nozzle configured to dispense a liquid. The liquid-dispensing system includes at least one sensor module, configured to provide a sensor signal comprising information related to whether liquid is dispensed by the at least one nozzle. At least a part of the at least one sensor is located in proximity of the nozzle.

Liquid-dispensing system, apparatus and method

A processing chamber includes a chamber body, a substrate support configured to hold a substrate in place, and a pre-heat ring having a central opening sized to be disposed around the substrate. A process gas inlet is configured to direct process gas in a lateral direction to flow over the pre-heat ring and the substrate. A process gas flow deflector includes a radially outer mounting portion and a radially inner blade-shaped process gas deflection portion extending in a radial direction. The radially inner blade-shaped process gas deflection portion is shaped as a ring segment. The radially inner blade-shaped process gas deflection portion is disposed above the process gas inlet and dimensioned to overlap with the pre-heat ring, wherein a degree of overlap between the pre-heat ring and process gas flow deflector in the radial direction is at least ½ of the radial dimension of the pre-heat ring.

Substrate processing chamber and process gas flow deflector for use in the processing chamber

A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.

Apparatus and method for chemical vapor deposition process for semiconductor substrates

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Villach, Austria

Christian Illemann