Siemens Aktiengesellschaft

Epcos Ag

Qualcomm Incorporated

Siemens Healthcare Gmbh

Siemens Aktiengesell Schaft

Siemens Aktiengesellschaft Ag

Epos Ag

Continental Automotive Gmbh

Tdk Electronics Ag

Christian Hoffmann

Hellmut Freudenberg

Richard Pirkl

Hartmut Gerken

Martin Hecker

Markus Koini

Michael Schossmann

Andrea Testino

Günter Engel

Eberhard Zwicker

Manfred Zollner

Achim Koch

Helmut Sommariva

Danilo Suvorov

Changhan Hobie Yun

Thomas Feichtinger

Christian Block

Dirk Baranowski

Guenter Engel

Igor Kartashev

Yongli Wang

Stefan Leopold Hatzl

Pavol Dudesek

Richard Eichhorn

Manuel Hofer

Matjaz Valant

Richard Wimmer

Wolfgang Lingl

Guenter Pudmich

Markus Ortner

Jonghae Kim

Mario Francisco Velez

Matthew Michael Nowak

Hans Krueger

Edgar Schmidhammer

Wei-Chuan Chen

Franz Rinner

Manfred Weigl

Niranjan Sunil Mudakatte

Walter Schrod

Walter Beyerlein

Sebastian Brunner

Andreas Hartke

Jürgen Portmann

Georg Brasseur

Christoph Auer

Patrick Schmidt-Winkel

Gia Khanh Pham

Xiaoju Yu

Holger Flühr

Klaus-Dieter Aichholzer

Ronald Dittrich

Jan Matschulla

Frank Forster

Edmund Payr

Norbert Hoffmann

Benno Larisch

Peter Rummel

Lorand D'Ouvenou

Thomas Ferger

Alain Brice Kounga Njiwa

Hannes Schiechl

Stefan Gies

Gerd Moersberger

Detlev Schoppe

Markus Huber

Horst Droescher

Rashid Karimi

Peter Bainschab

Rodrigo Pacher Fernandes

Klaus Egger

G&uuml;nther Riedel

Werner Salz

Matiaz Valant

Wolfgang Bock

A package comprising an acoustic device, a polymer frame coupled to the acoustic device, a plurality of frame interconnects located in the polymer frame, where the plurality of frame interconnects are coupled to the acoustic device, a polymer cap layer coupled to the acoustic device though the polymer frame, where the polymer cap layer is configured as a cap for the acoustic device, a plurality of cap interconnects located in the polymer cap layer, where the plurality of cap interconnects are coupled to the plurality of frame interconnects, and a cavity located between the acoustic device and the polymer cap layer. The acoustic device includes a substrate and an acoustic element coupled to the substrate.

Package comprising an acoustic device and a polymer cap layer

A passive on glass (POG) on filter capping apparatus may include an acoustic filter die. The apparatus may further include a capping die electrically coupled to the acoustic filter die. The capping die may include a 3D inductor.

Integration of through glass via (TGV) filter and acoustic filter

A housing for a high voltage tank has a boiler which is open on one side and a circuit board cover which closes the boiler. At least one strain gauge is arranged on or in the circuit board cover such that it is expanded or compressed with a pressure-induced deformation of the circuit board cover. A housing of this type is particularly suited as a high voltage tank for an x-ray emitter. An impermissible pressure in the housing for a high voltage tank can be determined easily and reliably.

High-voltage tank for high-voltage generation, including a strain gauge for tank pressure measurement

A ceramic material for capacitors using multilayer technology of formula (I): PbAB(ZrTi)CSiO+y&#xb7;PBO wherein A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb; C is selected from the group consisting of Ni and Cu; and 0&#x3c;a&#x3c;0.12, 0.05&#x2264;x&#x2264;0.3, 0&#x2264;c&#x3c;0.12, 0.001&#x3c;e&#x3c;0.12 and 0&#x2264;y&#x3c;1.

Ceramic material and capacitor comprising the ceramic material

The disclosure specifies a circuit arrangement having electronic first components arranged on a circuit board and lying at high-voltage potential. The circuit arrangement includes functionless, electronic second components lying at high-voltage potential, which are arranged on the circuit board adjacent to the electronic first components, and configured to reduce the maximum electrical field strength between the first components and a reference potential and/or between pads of the circuit board and the reference potential. Through the additional, functionless components, the maximum electrical field strength between electronic components at high voltage and at a reference potential will be reduced. The disclosure also specifies a high voltage generation unit and an x-ray generator.

Circuit arrangement for reducing the maximum electrical field strength, high voltage generation unit with such a circuit arrangement and x-ray generator with such a high voltage generation unit

A capacitor arrangement includes at least one ceramic multilayer capacitor with a main body having ceramic layers and first and second electrode layers arranged therebetween. The capacitor also has a first external contact and a second external contact on mutually opposite side surfaces. The first external contact is electrically conductively connected to the first electrode layers and the second external contact is electrically conductively connected to the second electrode layers. A contact arrangement includes two metallic contact plates, between which the at least one ceramic multilayer capacitor is arranged. The first and second external contacts are electrically conductively connected in each case to one of the metallic contact plates.

Capacitor arrangement

A ceramic multi-layer capacitor includes a main body, which has ceramic layers arranged along a layer stacking direction to form a stack, and first and second electrode layers arranged between the ceramic layers. The multi-layer capacitor also includes a first external contact-connection arranged on a first side surface of the main body and electrically conductively connected to the first electrode layers, and a second external contact-connection arranged on a second side surface of the main body. The second side surface is situated opposite the first side surface and is electrically conductively connected to the second electrode layers.

Ceramic multi-layered capacitor

A method of producing a ceramic component includes a) providing a main body having internal electrodes, outer edges of which are located on at least one first outer surface of the main body, b) contacting the first outer surface of the main body with a composition including an electrophoretically mobile insulating material and electrophoretically depositing the insulating material on outer edges of the internal electrodes on the first outer surface of the main body, and c) producing an insulating layer from the insulating material on the outer edges of the internal electrodes.

Method of producing a ceramic component having a main body with internal electrodes

An x-ray tube includes a vacuum housing. A cathode and an anode are disposed in the vacuum housing and insulated by at least one insulation element. Upon application of a high voltage, the cathode emits electrons that strike the anode as an electron beam. A voltage arrester device with an insulation path has a field strength that is higher than a field strength at the insulation element. If a voltage flashover occurs, the voltage is discharged via the voltage arrester device.

X-ray tube

A ceramic multi-layer capacitor includes a main body, which has ceramic layers arranged along a layer stacking direction to form a stack, and first and second electrode layers arranged between the ceramic layers. The multi-layer capacitor also includes a first external contact-connection arranged on a first side surface of the main body and electrically conductively connected to the first electrode layers, and a second external contact-connection arranged on a second side surface () of the main body (). The second side surface is situated opposite the first side surface and is electrically conductively connected to the second electrode layers.

An electrical device having at least one functional element that includes a ceramic body, on which a first electrical contact layer and a second electrical contact layer are applied to two opposite-lying side faces, respectively, and the functional element is arranged between a first contact strip and a second contact strip, wherein the first contact strip and the second contact strip comprise several contact pins, respectively, and wherein the first contact layer electrically contacts at least one contact pin of the first contact strip and the second contact layer electrically contacts at least one contact pin of the second contact strip.

Electrical device

A ceramic multi-layer capacitor is disclosed. In an embodiment, the capacitor includes a main body having ceramic layers and first and second electrode layers arranged therebetween, wherein the ceramic layers includes a ceramic material on the basis of BaTiZrOwhere 0&#x2266;y&#x2266;1, which has a temperature-dependent capacitance anomaly.

Ceramic multi-layer capacitor based on BaTi(1-y)ZryO3

A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and a second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.

Monolithic ceramic component and production method

A ceramic multilayer capacitor includes a first capacitor unit, which comprises a first material, and a second capacitor units, which comprises a second material. The first and the second capacitor unit are electrically connected in parallel. At low applied voltages, the first material has a high dielectric value and, at high applied voltages the second material has a high dielectric value.

Ceramic multilayer capacitor

A ceramic material for capacitors uses multilayer technology of the general formula: PbAB(ZrTi)LiCFeSiO+y.PBO wherein A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb; B is selected from the group consisting of Na, K and Ag; C is selected from the group consisting of Ni, Cu, Co and Mn; and 0&#x3c;a&#x3c;0.12; 0.05&#x2266;x&#x2266;0.3; 0&#x3c;b&#x3c;0.12; 0&#x2266;c&#x2266;0.12; 0&#x3c;d&#x3c;0.12; 0&#x2266;e&#x2266;0.12; 0&#x2266;f&#x2266;0.12; 0&#x2266;y&#x2266;1, and wherein b+d+e+f&#x3e;0.

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Munich, Germany

Christian Hoffmann