Infineon Technologies Ag

Infineon Technology Ag

Christian Hecht

Roland Rupp

Hans-Joachim Schulze

Jens Peter Konrath

Rudolf Elpelt

Wolfgang Bergner

Andre Kabakow

Andre Rainer Stegner

Bernd Zippelius

Tobias Hoechbauer

A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers include outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer.

Semiconductor device with a passivation layer and method for producing thereof

A method for manufacturing a silicon carbide substrate for an electrical silicon carbide device includes providing a silicon carbide dispenser wafer including a silicon face and a carbon face and depositing a silicon carbide epitaxial layer on the silicon face. Further, the method includes implanting ions with a predefined energy characteristic forming an implant zone within the epitaxial layer, so that the ions are implanted with an average depth within the epitaxial layer corresponding to a designated thickness of an epitaxial layer of the silicon carbide substrate to be manufactured. Furthermore, the method comprises bonding an acceptor wafer onto the epitaxial layer so that the epitaxial layer is arranged between the dispenser wafer and the acceptor wafer. Further, the epitaxial layer is split along the implant zone so that a silicon carbide substrate represented by the acceptor wafer with an epitaxial layer with the designated thickness is obtained.

Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device

A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers comprise outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer. The inner and outer edge sides of the third layer are closer to the outer edge side of the electrode than the respective inner and outer edge sides of the first and second layer.

A semiconductor device includes a silicon carbide body that includes a first section and a second section. The first section is adjacent to the second section. A drift region is formed in the first section and the second section. A lattice defect region is in a portion of the drift region in the second section. A first density of lattice defects, which include interstitials and vacancies in the lattice defect region, is at least double a second density of lattice defects, which include interstitials and vacancies in a portion of the drift region outside the lattice defect region.

Semiconductor device including silicon carbide body and method of manufacturing

Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. A component layer may be applied to the substrate layer. The acceptor wafer is detached from the substrate layer. In some examples, further processing may be executed with regard to the substrate and/or component layers.

Semiconductor component having a doped substrate layer and corresponding methods of manufacturing

A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.

Silicon carbide device and a method for forming a silicon carbide device

A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type.

Silicon carbide device and a method for manufacturing a silicon carbide device

A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including a doping of ions of a transition metal or including an increased density of intrinsic point defects in comparison to a density of intrinsic point defects of the buried lateral silicon carbide edge termination region.

Growing community of inventors

Buckenhof, Germany

Christian Hecht