Siemens Aktiengesellschaft

Infineon Technologies Ag

Osram Gmbh

Osram Opto Semi-conductors Gmbh Co. Ohg

Christian Hanke

Jochen Heinen

Martin Rudolf Behringer

Johann Luft

Bruno Acklin

Karl-Heinz Schlereth

Werner Späth

Bernhard Stegmueller

Karl Joachim Ebeling

Zeljko Spika

Jörg Heerlein

Lutz Korte

Karl-Joachim Ebeling

A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser

A method for coupling a surface-oriented opto-electronic element, particularly, a VCSEL laser diode, an LED, or a photodiode, with an optical fiber and an opto-electronic element for carrying out such a method, the opto-electronic element having a rotationally symmetrical protruding structure disposed symmetrically with respect to the optically active zone of the opto-electronic element, includes the steps of wetting the butt of the fiber and/or the protruding structure of the opto-electronic element with a transparent adhesive, moving the opto-electronic element and/or the fiber toward each other such that a substantially frictionless movement of at least one of the element and fiber can occur, waiting for a self-centering of the fiber and the protruding portion; and waiting for or bringing about a hardening of the adhesive for purposes of fixing the now-centered configuration between the fiber and the protruding portion.

Method for coupling a surface-oriented opto-electronic element with an optical fiber and opto-electronic element for carrying out such a method

In the case of a multiple semiconductor laser structure containing a plurality of laser pn junctions stacked vertically one on top of the other, different operating temperatures of the active zones occur during operation on account of the different distance within the layer structure from a common heat sink. The displacements in the emission wavelength caused by the temperature influence are compensated by a variation of the thickness and/or material composition of the active zones, so that a narrow wavelength distribution is achieved.

Multiple semiconductor laser structure with narrow wavelength distribution

An LED having improved light emission characteristics by allowing radiation generated to be guided towards the side faces of the LED by means of a relatively thick waveguide comprised of a transmissive material, specifically in such a way that as many modes as possible can propagate.

LED with light emission on all sides

A semiconductor laser arrangement for high output power in the lateral fundamental mode. A semiconductor laser region is provided in which a waveguide is provided for wave guidance, this waveguide being dimensioned such that the laser emission oscillates in the fundamental mode perpendicularly to its propagation direction. The arrangement has a coupling region, and an intensification region in which the lateral wave guidance is cancelled and is provided with a contact for current injection.

Semiconductor laser arrangement for high output powers in the lateral

A semiconductor laser array having laser active strips optically coupled to one another, wherein only every second laser active strip emits laser energy so that one main emission lobe appears.

Growing community of inventors

Munich, Germany

Christian Hanke