Semikron Elektronik Gmbh &co.kg

Semikron Elektronik Gmbh

Semikron Gmbh & Co., Kg

Export-contor Aussenhandelsgesellschaft Mbh

Christian Goebl

Heinrich Heilbronner

Heiko Braml

Peter Beckedahl

Karlheinz Augustin

Werner Tursky

Tobias Fey

Marian Mateicka

Jan Halaj

Pavel Kavicky

Ulrich Herrmann

Thomas Frank

A connecting device which can be arranged relative to a photovoltaic module for the purpose of electrically connecting a plurality of photovoltaic modules to one another and/or to an inverter device comprising at least a housing. The housing includes a first housing element and a second housing element; first connection devices for electrical connection to the photovoltaic module arranged in the first housing element; and second connection devices for electrical connection to a further connecting device or to the inverter device of a semiconductor circuit having at least one semiconductor component arranged in the second housing element. The connecting device further includes first contact devices, which are associated with the first housing element, and second contact devices, which are associated with the second housing element. The semiconductor circuit arrangement can be electrically connected to the first connection devices.

Connecting mechanism arrangeable to a photovoltaic module

A semiconductor arrangement, in particular a power semiconductor arrangement, in which a semiconductor having a top side provided with contacts is connected to an electrical connection device formed from a film assembly wherein an underfill is provided between the connection device and the top side of the semiconductor. The underfill has a matrix formed from a preceramic polymer.

Semiconductor arrangement

A power semiconductor module comprising a substrate, a circuit formed thereon and having a plurality of conductor tracks that are electrically insulated from one another and power semiconductor components arranged on the conductor tracks. The latter are connected in a circuit-conforming manner by a connection device, which has an alternating layer sequence of at least two electrically conductive layers with at least one electrically insulating layer between them. In this case, the substrate has a first sealing area, which uninterruptedly encloses the circuit. Furthermore, this sealing area is connected to an assigned second sealing area on a layer of the connection device by a connection layer. According to the invention, this power semiconductor module is produced by applying pressure to the substrate, to the power semiconductor components and to the connection device.

Power semiconductor module with a hermetically tight circuit arrangement and method for producing such a module

A power semiconductor component having a basic body and at least one contact area. At least one first thin metallic layer of a first material is arranged on the contact area. A second metallic layer&#x2014;thicker than the first&#x2014;of a second material is arranged on the first material by a pressure sintering connection of said material. The associated method has the following steps: producing a plurality of power semiconductor components in a wafer; applying at least one first thin metallic layer on at least one contact area of a respective power semiconductor component; arranging a pasty layer, composed of the second material and a solvent, on at least one of the first metallic layers for each power semiconductor component; pressurizing the pasty layer; and singulating the semiconductor components.

Power semiconductor component with metal contact layer and production method therefor

A power semiconductor module is presented. The power semiconductor module has a substrate, a composite film, and a power semiconductor component between the substrate and the composite film. The composite film has a thin circuit-structured logic metal layer and a thick circuit-structured power metal layer and between them a thin electrically insulating plastic film. The composite film includes contact nubs, which provide bonding to the power semiconductor component. Feedthrough holes are provided between the logic metal layer and the power metal layer. The plastic film in the region of the respective through-plated hole includes a recess in a region that is free of the logic metal layer. A segment of a flexible thin wire extends through the free region of the logic metal layer and through the recess in the plastic film and is bonded to the logic metal layer and the power metal layer by means of bonding sites.

Power semiconductor module

The invention provides a power semiconductor module including a power converter module with an improved configuration technology that minimizes or eliminates the need for a positive bonding (soldering/adhesive) connection between a power semiconductor element and a contact surface of a substrate. The present invention includes a housed or encapsulated power semiconductor element with a pre-secured connecting element that reduces manufacturing time and costs, while improving performance capability in a decreased size.

The circuit arrangement comprises a mounting plate carrying at least one preferably chip-form component and contact surfaces electrically conductively connected to the component by connecting elements. The mounting plate is carried on a cooling member and is pressed thereagainst by a pressing arrangement. The pressing arrangement has a mounting element, with an elastically yielding cushion element on the side which is towards the cooling member, to press against the electrical component and/or in the vicinity thereof against the mounting plate in electrically insulated relationship therewith.

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Nürnberg, Germany

Christian Goebl