Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Christian Gaertner

Ales Markytan

Thomas Schlereth

Tony Albrecht

Gerhard Kuhn

Roland Schulz

Albert Schneider

Markus Kirsch

Michael Bestele

Horst Varga

Karlheinz Arndt

Tobias Gebuhr

Ulrich Streppel

Stephan Kaiser

Jan Marfeld

Hans-Christoph Gallmeier

Peter Holzer

Manfred Scheubeck

Stefan Handl

In one embodiment, the method is configured for producing optoelectronic semiconductor components () and includes the steps of:

Method for producing optoelectronic semiconductor components, leadframe assembly and optoelectronic semiconductor component

An optical element has an optical body and a number of microstructures. The optical body takes the form of a half-shell and has an inner face and an outer face. The microstructures form the inner and/or outer face of the optical body at least in places and are light-scattering refractive structures. The invention further relates to a radiation-emitting device having at least one semiconductor component and one such optical element.

Optical element and radiation-emitting device comprising such an optical element

A lighting device has a carrier with a mounting face. A number of light-emitting diodes include at least two of the light-emitting diodes suitable for emitting light of different colors during operation. At least one color sensor, during operation, detects the light of at least one of the light-emitting diodes. At least one light-measuring face is illuminated by light of at least one of the light-emitting diodes and reflects and/or scatters at least a portion of this light. The light-emitting diodes and the at least one color sensor are arranged on the mounting surface, the at least one light-measuring face is arranged at a distance from the carrier, and the at least one color sensor; detects for the most part light reflected by the at least one light-measuring face from at least one of the multiplicity of light-emitting diodes.

Lighting device

A ring light module having a plurality of optoelectronic semiconductor components for producing electromagnetic radiation, a reflector of the ring light module comprising a reflective surface, and a support. The semiconductor components are mounted on the support. In a plan view of a main radiation side of the ring light module, the reflector comprises at most two planes of symmetry. The reflector tapers in the direction towards the main radiation side. At least some of the main emission directions of adjacent optoelectronic semiconductor components are oriented differently from each other, and the main emission directions point towards the reflective surface.

Ring light module

An optoelectronic component comprises: at least one semiconductor chip suitable for generating electromagnetic radiation, a beam shaping element (), through which at least part of the electromagnetic radiation emitted by the semiconductor chip during operation passes and which has an optical axis (), and which has an outer contour () with respect to a coordinate system () perpendicular to the optical axis (), wherein the contour () constitutes a curve (n) that is mirror-symmetrical with respect to both central axes (a, a) of an ellipse (e) inscribed by the contour, wherein the following succeed one another in each of the four identical sections between the respective central axes (a, a): an ellipse segment (b), a linear part (c) a second ellipse segment (d), a further linear part (c) and a third ellipse segment (b).

Optoelectronic component

A semiconductor chip () is provided which comprises:

Monolithic semiconductor chip array

An optoelectronic semiconductor chip () is specified, comprising a semiconductor layer sequence () having at least two active regions () arranged one above another, wherein the active regions () each have a first semiconductor region () of a first conduction type, a second semiconductor region () of a second conduction type and a radiation-emitting active layer () arranged between the first semiconductor region () and the second semiconductor region (). The optoelectronic semiconductor chip () comprises a mirror layer (), which is arranged at a side of the semiconductor layer sequence () facing away from a radiation exit surface (), and at least two electrical contacts () which are arranged at a side of the mirror layer () facing away from the radiation exit surface (). Furthermore, a light source () comprising the optoelectronic semiconductor chip () is specified.

Optoelectronic semiconductor chip, and light source comprising the optoelectronic semiconductor chip

A lighting device may include: a rod-shaped carrier body with at least one first and one second mounting side and a main direction of extent, first semiconductor light-emitting elements on first mounting faces of the first mounting side, and second semiconductor light-emitting elements on second mounting faces of the second mounting side, wherein the first and the second mounting sides face away from one another, wherein the mounting faces are formed by depressions in the mounting sides, which depressions are arranged so as to be spaced apart along the main direction of extent, and wherein the first semiconductor light-emitting elements are identical to one another and the second semiconductor light-emitting elements are identical to one another.

A mixed light source has a first semiconductor component, which is provided for generating a first radiation fraction, and a second semiconductor component, which is provided for generating radiation of a second radiation fraction different from the first radiation fraction. The first semiconductor component is mounted by a first mounting point on a first heat sink with a first thermal resistance R. The second semiconductor component is mounted by a second mounting point on a second heat sink with a second thermal resistance R. The thermal resistances Rand Rare different from one another.

Mixed light source

A light-emitting device includes at least one first light-emitting semiconductor component, which radiates red light during operation, at least one second light-emitting semiconductor component having a wavelength conversion element, and at least one third light-emitting semiconductor component having a wavelength conversion element. The second and third light-emitting semiconductor components each radiate blue primary light and converted secondary light and the respective superposition of the primary light and the secondary light of the second and third light-emitting semiconductor components has different chromaticity coordinates.

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Wuppertal, Germany

Christian Gaertner